| PART |
Description |
Maker |
| 2SC4617T1G |
NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT 100 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR
|
Rectron Semiconductor
|
| MPSA05 MMBTA05 MPSA05RA |
NPN General Purpose Amplifier 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
NPN Medium Power Transistor
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| MSC2295BT1 MSC2295-BT1 MSC2295-CT1 ON2374 |
NPN RF Amplifier Transistors Surface Mount Si, NPN, RF SMALL SIGNAL TRANSISTOR
NPN RF Amplifier Transistors Surface Mount UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
CASE 318D3, STYLE 1 SC9
From old datasheet system
|
MOTOROLA INC
Motorola Mobility Holdings, Inc.
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MPS6717-D |
One Watt Amplifier Transistor NPN Silicon
Small Signal Amplifier NPN
|
ON Semiconductor
|
| KSH31 KSH31C KSH31CTF KSH31TF |
NPN Epitaxial Silicon Transistor
General Purpose Amplifier Low Speed Switching Applications 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-252
|
Fairchild Semiconductor Corporation
Fairchild Semiconductor, Corp.
|
| KTD1510 |
Triple Diffused NPN Transistor(Hign Power Amplifier,Darlington Transistor)(涓???╂?NPN?朵?绠★?澶у????澶у???揪??】?朵?绠★?)
|
KEC Holdings
|
| 154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C)
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五（巴西）总裁| 7.5AI（丙）|个STR - 1 / 4
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五（巴西）总裁| 7.5AI（丙
|
NXP Semiconductors N.V.
Bel Fuse, Inc.
YEONHO Electronics Co., Ltd.
|
| ENA1108 15GN03MA |
NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications
VHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Sanyo Semicon Device
|
| G8051 |
The G8051 is designed for use in 2W output amplifier of portable radios in class B push-pull operation
NPN EPITAXIAL TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
|
E-Tech Electronics LTD
List of Unclassifed Manufacturers
GTM CORPORATION
|
| 2SC4536 2SC4536QS |
TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 250MA I(C) | TO-243 晶体管|晶体管|叩| 15V的五（巴西）总裁|毫安一c）|43
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR
|
Actel, Corp.
NEC[NEC]
|
