| PART |
Description |
Maker |
| K4S643232E-TL45 K4S643232E-TL55 K4S643232E-TL70 K4 |
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存512k × 32 × 4银行同步DRAM LVTTL
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL 200万32内存12k × 32 × 4银行同步DRAM LVTTL
512K x 32Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S643232E-TN70 K4S643232E-TE50 K4S643232E- K4S643 |
LED ORANGE DIFFUSED 2X5 RECT 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL.3
2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V) 200万32内存12k × 32 × 4银行同步DRAM LVTTL3.3
LED ORANGE DIFFUSED 2X5 RECT
CONNECTOR ACCESSORY
LED ORG/RED DIFFUSED 2X5MM RECT
-2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| HY57V653220BTC-6 HY57V653220BTC HY57V653220BTC-10 |
4 Banks x 512K x 32Bit Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
|
| K4S56323LF-FC |
2M x 32Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| K4M283233H K4M283233H-FG60 K4M283233H-FG75 K4M2832 |
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA
|
Samsung semiconductor
|
| K4M513233C-SDF75 K4M513233C-SDG75 K4M513233C-SN7L |
16M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90
4M X 32BIT X 4 BANKS MOBILE SDRAM IN 90FBGA
|
SAMSUNG[Samsung semiconductor]
|
| K4S28323LF K4S28323LF-ER1H K4S28323LF-F K4S28323LF |
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
1M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 100万x 32Bit的4银行0FBGA移动SDRAM
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4M563233E-N K4M563233E K4M563233E-C K4M563233E-E |
2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM
8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M52D32321A-10BG M52D32321A-7.5BG |
512K x 32Bit x 2Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| K4D26323RA K4D26323RA-GC2A K4D26323RA-GC33 K4D2632 |
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| GS8150F32 |
16Mb12K x 32Bit）Synchronous Burst SRAM(16M位（512K x 32位）同步静态RAM（带2位脉冲地址计数器）)
|
GSI Technology
|
