| PART |
Description |
Maker |
| FQU5P20 FQD5P20 FQD5P20TM |
200V P-Channel QFET
200V P-Channel MOSFET 3.7 A, 200 V, 1.4 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| FQI7P20 FQB7P20 FQB7P20TM |
200V P-Channel QFET
200V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQT3P20 FQT3P20TF |
200V P-Channel QFET
200V P-Channel MOSFET
|
Fairchild Semiconductor
|
| FQU7P20 FQD7P20 FQU7P20TU |
200V P-Channel QFET
200V P-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQI4N20TU |
200V N-Channel QFET
|
Fairchild Semiconductor
|
| FQA32N20C |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
From old datasheet system
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFS250 IRFS250B IRFS250BFP001 |
200V N-Channel B-FET / Substitute of IRFS250 & IRFS250A
200V N-Channel MOSFET
|
Fairchild Semiconductor
|
| IRF620B IRF620BFP001 IRFS620BFP001 |
200V N-Channel B-FET / Substitute of IRFS620 & IRFS620A
200V N-Channel B-FET / Substitute of IRF620 & IRF620A
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| OM6039SM |
200V , 9 Amp, N-Channel Power MOSFET(200V , 9A,N沟道，功率MOS场效应管) 00V安培，N沟道功率MOSFET（为200V9A条，沟道，功率马鞍山场效应管
|
HIROSE ELECTRIC Co., Ltd.
|
| IRHNA57260 IRHNA54260 IRHNA58260 IRHNA57060 IRHNA5 |
200V N-CHANNEL
RADIATION HARDENED POWER MOSFET
200V, N-CHANNEL
|
IRF[International Rectifier]
|
| FQE10N20C FQE10N20CTU |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FQD10N20C FQU10N20C FQD10N20CTM FQD10N20CTF FQU10N |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
