| PART |
Description |
Maker |
| HY64UD16162B-DF70I |
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM 1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48
|
Hynix Semiconductor, Inc.
|
| HY64LD16322M-DF85I HY64LD16322M-DF85E |
PSEUDO-STATIC RAM|2MX16|CMOS|BGA|48PIN|PLASTIC
x16|2.5(VDD)2.5(VDDQ)V|85|Pseudo SRAM - 32M x16 | 2.5（VDD）在2.5（提供VDDQ）V | 85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
| EM567168 |
2M x 16 Pseudo SRAM
|
Etron Technology, Inc.
|
| LC331632M-10 LC331632M-12 LC331632M-70 LC331632M-8 |
512K (32768 words X 16 bits) Pseudo-SRAM
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| M74DW66500B |
2x 64Mbit Flash Memory and 32Mbit Pseudo SRAM
|
ST Microelectronics
|
| UPD42832GU-12L UPD42832GU-15L UPD42832C-12L |
18-Mbit DDR-II SRAM 2-Word Burst Architecture
x8 Pseudo-Static RAM x8伪静态存储器
|
Picker Components
|
| IS75V16F64GS16-7080DI 75V16F64GS16 |
64 Mbit FLASH MEMORY AND 16 Mbit PSEUDO SRAM STACKED MULTI-CHIP PACKAGE (MCP)
|
ISSI[Integrated Silicon Solution, Inc]
|
| HY64UD16162M-DF85E HY64UD16162M-DF85I HY64UD16162M |
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
|
Hynix Semiconductor
|
| HY64UD16162B HY64UD16162B-DF60E HY64UD16162B-DF60I |
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
|
Hynix Semiconductor
|
| HY64LD16162M-DF85E HY64LD16162M-DF85I HY64LD16162M |
1M x 16 bit Low Low Power 1T/1C Pseudo SRAM
|
Hynix Semiconductor
|
| CYU01M16ZCCU-70BVXI CYU01M16ZCC |
1M X 16 PSEUDO STATIC RAM, 70 ns, PBGA48 6 X 8 MM, 1 MM HEIGHT, LEAD FREE, VFBGA-48
16-Mbit (1M x 16) Pseudo Static RAM
|
Cypress Semiconductor, Corp.
|
| BA8201 BA8201F BA8201/F |
Pseudo inductance for telephones
Pseudo Inductance for Telephones(电话的虚拟感 伪电感的电话（电话的虚拟感应
Communications LSIs > ICs for telephone > Simulated inductance
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
