| PART |
Description |
Maker |
| IRF044 IRF044-15 |
Repetitive Avalanche Ratings
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE)
60V Single N-Channel Hi-Rel MOSFET in a TO-204AE package
|
International Rectifier
|
| RFP70N06 RFG70N06 RF1S70N06 RF1S70N06SM |
70A/ 60V/ Avalanche Rated/ N-Channel Enhancement-Mode Power MOSFETs
70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFAG40 |
REPETITIVE AVALANCHE AND dv/dt RATED HEXFETTRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET剖TRANSISTORS THRU-HOLE (TO-204AA/AE)
1000V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
|
International Rectifier
|
| IXTY64N055T IXTP64N055T |
N-Channel Enhancement Mode Avalanche Rated
TrenchMV Power MOSFET N-Channel EngancementMode Avalanche Rated
|
IXYS Corporation
|
| RFD8P06LE |
8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET
|
Fairchild Semiconductor
|
| STD30NE06L 6044 STD30NE06LT4 |
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-252AA 晶体管| MOSFET的| N沟道| 60V的五（巴西）直| 30A条（丁）|52AA
N - CHANNEL 60V - 0.025 ohm - 30A TO-252 STripFET POWER MOSFET
From old datasheet system
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| ISL9V2040S3ST ISL9V2040D3S04 ISL9V2040D3ST ISL9V20 |
10A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
EcoSPARKTM 200mJ, 400V, N-Channel Ignition IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFE210 JANTXV2N6784U JANTX2N6784U |
200V Single N-Channel Hi-Rel MOSFET in a 18-pin LCC package 200伏单N沟道高可靠性的18 MOSFET的引脚LCC封装
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R?TRANSISTORS SURFACE MOUNT (LCC-18)
REPETITIVE AVALANCHE AND dv/dt RATED HEXFET-R剖TRANSISTORS SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| ISL9V3040D3S04 ISL9V3040S3ST ISL9V3040D3S ISL9V304 |
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
17A, 400V Logic Level, Voltage Clamped, Avalanche Energy Rated, ESD Protected IGBT
|
FAIRCHILD[Fairchild Semiconductor]
|
| BUZ102 C67078-S1351-A2 BUZ102E3045A BUZ102E3249 |
N-Channel SIPMOS Power Transistor
From old datasheet system
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) 42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
42 A, 50 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated) SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon Technologies AG
|
| BUZ104SL Q67040-S4006-A2 |
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175∑C operating temperature)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
