| PART |
Description |
Maker |
| M5K4164AL-12 M5K4164AL-15 |
65 536 BIT DYNAMIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MN4164-20 MN4164P-20 MN4164-25 MN4164P-15 MN4164P- |
NMOS 65,536 X 1 BIT DYNAMIC RAM
|
Panasonic Corporation
Panasonic Semiconductor
|
| MSM511664CL MSM511664C |
65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE)
From old datasheet system
|
OKI
|
| MSM511664CL-80TS-K MSM511664C-70JS MSM511664C-XXTS |
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE (BYTE WRITE) 65,536字16位动态随机存储器：快速页面模式型（字节写
|
OKI SEMICONDUCTOR CO., LTD.
|
| MSM511666CL MSM511666C |
65,536-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE)
From old datasheet system
|
OKI
|
| MSM511666CL-XXTS-K MSM511666C-XXTS-K MSM511666CL-7 |
65,536-Word X 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO (BYTE WRITE) 65,536字16位动态随机存储器：快速页面模式型江户（字节写
|
OKI SEMICONDUCTOR CO., LTD.
|
| TC55V16648BBFT-10 TC55V16648BBFT-12 TC55V16648BBFT |
65,536-WORD BY 16-BIT CMOS STATIC RAM 65,536字由16位的CMOS静态RAM
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| MSM52V1017LL |
65,536-Word ×16-Bit CMOS STATIC RAM(64k字6位静态RAM)
From old datasheet system
65,536-Word x 16-Bit CMOS STATIC RAM
|
OKI SEMICONDUCTOR CO., LTD.
|
| IC41SV4105 IC41SV4105-50J IC41SV4105-50JG IC41SV41 |
DYNAMIC RAM, FPM DRAM
From old datasheet system
1Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
2097152 WORDS x 32 BIT DYNAMIC RAM MODULE
2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE
2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HYB514400BJL-70 HYB514400BJL-60 HYB514400BJL-50 HY |
1 048 576 x 4-Bit Dynamic RAM
4 194 304 x 1-Bit Dynamic RAM
|
Infineon
|
| HYB3116405BT-50 HYB5117405BJ-50 HYB3117405BJ-50 HY |
RES 100K-OHM 1% 0.063W 200PPM THICK-FILM SMD-0402 10K/REEL-7IN-PA 4M X 4 EDO DRAM, 60 ns, PDSO24
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 4M X 4 EDO DRAM, 60 ns, PDSO24
4M×4-Bit Dynamic RAM(2k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (2K刷新,超级页面EDO))
4M×4-Bit Dynamic RAM(4k-Refresh,Hyper Page Mode - EDO)(4M×4动RAM (4K刷新,超级页面EDO))
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS AG
http://
Siemens Semiconductor Group
|
