| PART |
Description |
Maker |
| LC322271J LC322271T-70 LC322271T-80 LC322271M |
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode / Byte Write
2 MEG (131072 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
SANYO[Sanyo Semicon Device]
|
| LC338128M LC338128P LC338128PL LC338128M-80 LC3381 |
1 MEG (131072 words x 8 bit) pseudo-SRAM
1MEG (131072 WORDS X 8BITS) PSEUDO-SRAM
|
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| LE28CV1001M LE28CV1001T LE28CV1001T-12 LE28CV1001T |
1MEG (131072 words x 8 bits) Flash Memory
|
SANYO[Sanyo Semicon Device]
|
| LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
| LC321664BJ LC321664BM LC321664BT-70 LC321664BT-80 |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| LC374100SM LC374100ST |
4 MEG (524288 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
|
SANYO[Sanyo Semicon Device]
|
| LC378100QM LC378100QT |
8 MEG (1048576 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
|
SANYO[Sanyo Semicon Device]
|
| LC35256FM LC35256FM-70U FT-55U FT-70U LC35256FT-70 |
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
256K (32768 words 8 bits) SRAM Control Pins: NOT OE and NOT CE
256K (32768 words x 8 bits) SRAM Control Pins: Not OE and Not CE
256K (32768 words X 8 bits) SRAM Control Pins: OE and CE
256K (32768 words 8 bits) SRAM Control Pins: OE and CE
SRAM,32KX8,CMOS,SOP,28PIN,PLASTIC
From old datasheet system
|
Intersil
Sanyo Semiconductor Corp
SANYO[Sanyo Semicon Device]
Sanyo Electric Co.,Ltd.
|
| IS42S16400-7T IS42S16400-7TI IS42S16400-6T IS42S16 |
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc
|
| EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
|
Elpida Memory, Inc.
ELPIDA MEMORY INC
|
