| PART |
Description |
Maker |
| TISPPBL3 TISPPBL3D TISPPBL3D-S TISPPBL3DR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) 双远期导电的P -门晶闸管爱立信微电子用户线接口电路电路（SLIC
|
Bourns Inc.
Bourns, Inc.
|
| TISP61089S TISP61089SD TISP61089SDR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Power Innovations Ltd
Power Innovations Limited
|
| TISP61521D-S TISP61521D TISP61521DR-S TISP61521 TI |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solutions
|
| TISP61089P TISP61089 TISP61089ADR TISP61089AP TISP |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS PROGRAMMABLE OVERVOLTAGE PROTECTORS
Dual Programmable Thyristor Surge Protector
|
Bourns Electronic Solut...
Bourns Electronic Solutions
POWER
|
| TISP5190H3BJ TISP5110H3BJ |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
|
Bourns Electronic Solut...
|
| 5SHX04D4502 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
| DGT304RE DGT304RE13 |
Reverse Blocking Gate Turn-off Thyristor 390 A, 1300 V, REVERSE CONDUCTING GTO SCR
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| FS1UM-16A |
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| LS33401111 LY3340-M LG3340 LG3340-KN LG3340-L LG33 |
T1(3mm) LED LAMP T1毫米）发光二极管
Standard Recovery Rectifier; Forward Current:15A; Forward Current Average:9.5A; Forward Current Avg Rectified, IF(AV):9.5A; Forward Surge Current Max, Ifsm:225A; Forward Voltage:1.1V; Forward Voltage Max, VF:1.1V RoHS Compliant: Yes
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| HEC4002BT HEC4002BT112 |
Dual 4-input NOR gate; Package: SOT108-1 (SO14); Container: Tube 4000/14000/40000 SERIES, DUAL 4-INPUT NOR GATE, PDSO14
HEF4002B gates; Dual 4-input NOR gate
|
NXP Semiconductors N.V.
Philips
|
| 74ABT20D-T 74ABT20DB118 |
Dual 4-input NAND gate - Description: Dual 4-Input NAND Gate ; Logic switching levels: TTL ; Number of pins: 14 ; Output drive capability: -15/ 20 mA ; Propagation delay: 2.7 ns; Voltage: 4.5-5.5 V ABT SERIES, DUAL 4-INPUT NAND GATE, PDSO14
|
Ecliptek, Corp.
NXP SEMICONDUCTORS
|
