| PART |
Description |
Maker |
| K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4J55323QF-GC14 K4J55323QF-GC16 K4J55323QF-GC15 K4 |
256Mbit GDDR3 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M65KG256AB |
256Mbit (4 Banks x 4M x 16) 1.8V Supply, 133MHz Clock Rate, DDR Low Power SDRAM
|
STMicroelectronics
|
| V53C1256162VALS10 V53C1256162VALS10E V53C1256162VA |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| K4M51163PC-X |
8M x 16Bit x 4 Banks Mobile SDRAM
|
Samsung semiconductor
|
| T436416C T436416C-6S T436416C-7S T436416C-7SG T436 |
4M x 16 SDRAM 1M x 16bit x 4Banks Synchronous DRAM
|
TMT[Taiwan Memory Technology]
|
| T4312816B-7S T4312816B-7SG |
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
|
TM Technology, Inc.
|
| K4S51163LF-YPC/L/F1L K4S51163LF-YPC/L/F75 |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| T4312816B T4312816B-6SG T4312816B-7S T4312816B-7SG |
8M x 16 SDRAM 2M x 16bit x 4Banks Synchronous DRAM
|
Taiwan Memory Technology
|
| K4D551638F-TC33 K4D551638F-TC50 K4D551638F-TC36 K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
