| PART |
Description |
Maker |
| R1RP0408DGE-2PR R1RP0408D R1RP0408DGE-2LR |
4M High Speed SRAM (512-kword 8-bit)
4M High Speed SRAM (512-kword ?8-bit)
4M High Speed SRAM (512-kword ?8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
| R1RW0408DGE-2PR R1RW0408D R1RW0408DGE-2LR |
4M High Speed SRAM (512-kword x 8-bit)
Memory>Fast SRAM>Asynchronous SRAM
|
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| HM62W8512BLFP-5 HM62W8512BLFP-5SL HM62W8512BLFP-5U |
512K X 8 STANDARD SRAM, 55 ns, PDSO32
4 M SRAM (512-kword ? 8-bit)
4 M SRAM (512-kword 垄楼 8-bit)
4 M SRAM (512-kword ′ 8-bit)
|
Renesas Electronics Corporation
|
| HM6216255H HM6216255HJP-10 HM6216255HJP-12 HM62162 |
4M high Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWordx 16位）
4M high Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWord的x 16位）
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HM62W16255HI HM62W16255HJPI-15 HM62W16255HTTI-15 H |
High-Speed SRAMs
4M High Speed SRAM (256-kword x 16-bit)
|
HITACHI[Hitachi Semiconductor]
|
| HM62V8512CLTT-5 HM62V8512CLTT-5SL HM62V8512CLRR-5 |
4 M SRAM (512-kword ′ 8-bit)
4 M SRAM (512-kword ? 8-bit)
|
Renesas Electronics Corporation
|
| HM628512A HM628512ALFP-5 HM628512ALFP-5SL HM628512 |
4M SRAM (512 KWORD X 8 BIT)
|
HITACHI[Hitachi Semiconductor]
|
| HM62W8512BI HM62W8512BLTTI-8 HM62W8512BLTTI-7 |
4 M SRAM (512-kword ′ 8-bit)
4 M SRAM (512-kword ? 8-bit)
|
Renesas Electronics Corporation
|
| HM62W8512BI HM62W8512BLTTI-7 HM62W8512BLTTI-8 |
4 M SRAM (512-kword x 8-bit)
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HM62W16255H HM62W16255HJP-12 HM62W16255HJP-15 HM62 |
4M High Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWord的x 16位）
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| IDT70T633S12BCI IDT70T633S15BF IDT70T633S15BFI IDT |
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA256
122 x 32 pixel format, Compact LCD size 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA256
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 高.5V12/256K.3V 5011 2.5V的接口18 ASYNCHRONO美国双端口静态RAM
JFET-Input Operational Amplifier 8-SOIC 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256K x 18 ASYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V 0R 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 8 ns, PBGA208
JFET-Input Operational Amplifier 14-SOIC 0 to 70
WRISTBAND, ELASTIC, ADJUSTABLE 4MM RoHS Compliant: NA
High-speed 2.5V 512 x 18 asynchronous dual-port static RAM, 15ns
|
Integrated Device Technology, Inc.
IDT
|
