| PART |
Description |
Maker |
| BSP19AT1 BSP20AT1 |
SOT.223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
|
Motorola Inc
MOTOROLA[Motorola, Inc]
|
| FZT1151A FZT1151ATA FZT1151A-15 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 30V to 50V
PNP Low Sat Transistor
TRANS PNP -40V -3000MA SOT-223 3 A, 40 V, PNP, Si, POWER TRANSISTOR
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR 3 A, 40 V, PNP, Si, POWER TRANSISTOR
|
Zetex Semiconductors
Diodes Incorporated
Zetex Semiconductor PLC
|
| CZT7120 |
TRANSISTOR | BJT | PNP | 70V V(BR)CEO | 3A I(C) | SOT-223
|
|
| NSI45025AZ |
45 V, 25 mA ± 10%, 1.4 W package, Constant Current Regulator, SOT-223
|
ON Semiconductor
|
| STN3NE06 4877 |
N-Channel 60V-0.08Ω-3A - SOT-223 STripFETTM Power MOSFET(Ｎ沟道功率ＭＯＳＦＥ
N - CHANNEL 60V - 0.08ohm- 3A - SOT-223 STripFET POWER MOSFET
N - CHANNEL 60V - 0.08W - 3A - SOT-223 STripFET] POWER MOSFET
From old datasheet system
|
意法半导
STMicroelectronics
|
| 20CJQ060 20CJQ060TR |
60V 2A Schottky Common Cathode Diode in a SOT-223 package
|
International Rectifier
|
| IRFL110TR |
100V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| IRFL1006TR |
60V Single N-Channel HEXFET Power MOSFET in a SOT-223 package
|
International Rectifier
|
| PHT8N06LTT/R |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 3.5A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 3.5AI（四）|的SOT - 223
|
NXP Semiconductors N.V.
|
| BUK9880-55T/R |
TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 7.5A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 55V的五（巴西）直| 7.5AI（四）|的SOT - 223
|
Pulse Engineering, Inc.
|
| FQT26N03L |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 5.9A I(D) | SOT-223 晶体管| MOSFET的| N沟道| 30V的五（巴西）直| 5.9AI（四）|的SOT - 223
|
Fairchild Semiconductor, Corp.
|
