| PART |
Description |
Maker |
| KE524575HB KD621K20HB |
TRANSISTOR | BJT POWER MODULE | 3-PH BRIDGE | DARLINGTON | 450V V(BR)CEO | 75A I(C)
TRANSISTOR | BJT POWER MODULE | HALF BRIDGE | DARLINGTON | 850V V(BR)CEO | 200A I(C) 晶体管|晶体管电源模块|半桥|达林顿| 850V五（巴西）总裁| 200安培我（丙）
|
CERAMATE TECHNOLOGY CO., Ltd.
|
| BUT232V03 BUT232V_03 BUT232V |
NPN TRANSISTOR POWER MODULE
NPN TRANSISTOR POWER MODULE
140 A, 300 V, NPN, Si, POWER TRANSISTOR
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STE70IE120 |
Monolithic Emitter Switched Bipolar Transistor ESBT? 1200 V - 70 A - 0.014 Ω Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT 1200V 70A 0.014Ohm Power Module
Monolithic Emitter Switched Bipolar Transistor ESBT㈢ 1200 V - 70 A - 0.014 ヘ Power Module
|
ST Microelectronics, Inc.
STMICROELECTRONICS[STMicroelectronics]
|
| MP4020 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| DE375-301N40-00 DE150-102N02-00 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 40A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 40A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直|甲（丁）
|
EPCOS AG
Electronic Theatre Controls, Inc.
|
| Q67060-S7432 P-TO220-3-1 P-TO263-3-2 P-TO262-3-1 P |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=33mOhm, 47A, LL
SIPMOS垄莽 Power-Transistor
SIPMOS庐 Power-Transistor
SIPMOS? Power-Transistor
SIPMOS㈢ Power-Transistor
|
Infineon Technologies AG
|
| 2DI100D-050 |
Power transistor module for high power switching, AC and DC motor control applications
|
COLLMER SEMICONDUCTOR INC
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| 1DI200Z-120 |
Power transistor module for power switching, AC and DC motor controls
|
COLLMER SEMICONDUCTOR INC
FUJI[Fuji Electric]
FUJI ELECTRIC HOLDINGS CO., LTD.
|
| STE50DE100 |
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1000 V - 50 A - 0.026 W POWER MODULE 混合发射器开关双极晶体管内酰胺酶1000 50 0.026 W电源模块
From old datasheet system
HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT" 1000 V - 50 A - 0.026 Ohm POWER MODULE
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 1DI300MN-120 |
Power Transistor Module
|
Fuji Electric
|
| MP4507 |
Power Transistor Module
|
Toshiba
|
