| PART |
Description |
Maker |
| M59BW102 |
1 Mbit 64Kb x16, Burst Low Voltage Flash Memory
|
http://
|
| M27W102 6644 |
1 Mbit (64Kb x16) Low Voltage OTP EPROM
From old datasheet system
|
STMicro
|
| M36W0R6040T0 M36W0R6040B0ZAQF M36W0R6040T0ZAQF M36 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
STMicroelectronics
|
| M39P0R9080E0ZAD M39P0R9080E0ZADE M39P0R9080E0ZADF |
512 Mbit (x16, Multiple Bank, Multi-Level, Burst) Flash Memory 256 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package
|
Numonyx B.V
|
| M36WT864TF 8967 M36WV8B85ZA6T M36WT864 M36WT864B10 |
From old datasheet system
64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29F100BB M29F100BT 6612 |
1 Mbit (128Kb x8 or 64Kb x16, Boot Block)Single Supply Flash Memory
From old datasheet system
|
STMicro
|
| M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
| M69KB128AA |
128 Mbit (8Mb x16) 1.8V Supply Burst PSRAM
|
STMicroelectronics
|
| M69KB096AA |
64 Mbit (4M x16) 1.8V Supply 80MHz Clock Rate - Burst PSRAM
|
STMicroelectronics
|
| M69KB096AA85AW8 M69KB096AA M69KB096AA70CW8 |
64 Mbit (4M x16) 1.8V Supply, 80MHz Clock Rate, Burst PSRAM
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58WR064HB M58WR064HT M58WR064HT60ZB6E M58WR064HT6 |
64 Mbit (4Mb x16, Multiple Bank, Burst) 1.8V supply Flash memories
|
Numonyx B.V
|
