| PART |
Description |
Maker |
| TC58FVB160-12 TC58FVB160-85 |
16M Bit (1M×16Bits ) CMOS NAND EEPROM(16M CMOS与非EEPROM) 1,600位（100万16位）的CMOS闪存EEPROM的（1,600 EEPROM中的CMOS与非
|
Toshiba Corporation
Toshiba, Corp.
|
| K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C |
32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| KM29U128T |
16M x 8 Bit NAND Flash Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K |
16M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
http://
|
| W25X16VSSIG W25X32VSSIG W25X64VSSIG W25X16VSFI W25 |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
|
| MBM29LV160B-12PCV MBM29LV160T-12PCV MBM29LV160T-80 |
16M (2M x??8/1M x 16) BIT
CONNECTOR ACCESSORY 1M X 16 FLASH 3V PROM, 80 ns, PBGA48
16M (2M x8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PDSO46
CONNECTOR ACCESSORY 1M X 16 FLASH 3V PROM, 120 ns, PDSO48
16M (2M x8/1M x 16) BIT 1M X 16 FLASH 3V PROM, 80 ns, PBGA48
D10 - CONNECTOR ACCESSORY
16M (2M x′ 8/1M x 16) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| UPD23C16340GZ-XXX-MJH UPD23C16380GZ-XXX-MJH UPD23C |
16M-bit (2M-wordx8-bit/1M-wordx16-bit) Mask ROM
|
NEC
|
| HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
| MC-4516CC726 |
16M-Word By 72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| MX69F1604C3TXBI-90 MX69F1602 MX69F1602C3BXBI-70 MX |
16M-BIT [X16] FLASH AND 2M-BIT/4M-BIT [X16] SRAM MIXED MULTI CHIP PACKAGE MEMORY
|
MCNIX[Macronix International]
|
