| PART |
Description |
Maker |
| HM62W16255HC HM62W16255HCJP-10 HM62W16255HCLJP-10 |
4M High Speed SRAM (256-kword x 16-bit) 4分高速SRAM56 - KWordx 16位）
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| HM62W16255CJPI12 |
Wide Temperature Range Version 4M High Speed SRAM (256-kword 16-bit) 宽温版本4分高速SRAM56 - KWord的?16位）
|
Hitachi,Ltd.
|
| R1LV0416DBG-7LI R1LV0416DBG-5SI R1LV0416DSB-5SI R1 |
4M SRAM (256-kword 16-bit) 4分的SRAM56 - KWord的6位）
4M SRAM (256-kword ??16-bit)
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| HM628511HC HM628511HCJP-10 HM628511HCLJP-10 |
4M High Speed SRAM (512-kword x 8-bit)
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 35V; Case Size: 16x35.5 mm; Packaging: Bulk 4分高速SRAM12 - KWord的8位）
4M High Speed SRAM (512-kword x 8-bit) 4分高速SRAM12 - KWord的8位）
|
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
|
| HM628511CJPI12 HM628511HCJPI-12 HM628511HCI |
Memory>Fast SRAM>Asynchronous SRAM
Wide Temperature Range Version 4M High Speed SRAM (512-kword 】 8-bit)
Wide Temperature Range Version 4M High Speed SRAM (512-kword × 8-bit)
|
RENESAS[Renesas Electronics Corporation]
|
| R1LV0416CBG-5SI R1LV0416CBG-7LI R1LV0416CBG-I |
Memory>Low Power SRAM
Wide Temperature Range Version 4M SRAM (256-kword 】 16-bit)
Wide Temperature Range Version 4M SRAM (256-kword × 16-bit)
|
Renesas Electronics Corporation
|
| HM62W8511H HM62W8511HJP-12 HM62W8511HJP-15 HM62W85 |
4M High Speed SRAM (512-kword x 8-bit)
|
HITACHI[Hitachi Semiconductor]
|
| HM62V16256CBP HM62V16256CLBP-5 HM62V16256CLBP-5SL |
4 M SRAM (256-kword ′ 16-bit)
|
Renesas Electronics Corporation
|
| HM62V16256BLTT-8SL HM62V16256BLTT-8 HM62V16256BLTT |
4 M SRAM (256-kword ×16-bit)(4 M 静态RAM(256k字6) 四米的SRAM56 - KWord的16位）个M静态随机存储器56k字16位）
From old datasheet system
SRAM,256KX16,CMOS,TSOP,44PIN,PLASTIC
|
Hitachi,Ltd.
Hitachi America
|
| R1LP0408C R1LP0408CSB-5SI R1LP0408CSB-7LI R1LP0408 |
Wide Temperature Range Version 4 M SRAM (512-kword ??8-bit)
R1LP0408C-I Series Datasheet 78K/AUG.01.03
Standard Thick Film Chip Resistor: 10 ohms through 10 megohms, 5 %, 200 ppm, .100 W
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword × 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 8-bit)
Wide Temperature Range Version 4 M SRAM (512-kword 】 8-bit)
Memory>Low Power SRAM
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Renesas
|
| IDT70T3319S133BF IDT70T3319S133BC IDT70T3319S133DD |
JFET-Input Operational Amplifier 8-SOIC 0 to 70
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 128K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 高.5V12/256/128K X 18 SYNCHRONOU S双，端口静态与3.3V.5V的内存界
JFET-Input Operational Amplifier 8-TSSOP 0 to 70 512K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 12 ns, PQFP144
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 15 ns, PQFP144
JFET-Input Operational Amplifier 8-SO 0 to 70 256K X 18 DUAL-PORT SRAM, 12 ns, PBGA208
HIGH-SPEED 2.5V 512/256/128K X 18 SYNCHRONOUS DUAL-PORT STATIC RAM WITH 3.3V OR 2.5V INTERFACE 256K X 18 DUAL-PORT SRAM, 10 ns, PBGA208
|
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
