| PART |
Description |
Maker |
| 1SS383 |
DIODE LOW VOLTAGE HIGH SPEED SWITCHING
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS348 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS349 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS391 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| 1SS293 |
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING)
|
TOSHIBA[Toshiba Semiconductor]
|
| KDR728E |
SCHOTTKY BARRIER TYPE DIODE(LOW VOLTAGE HIGH SPEED SWITCHING)
|
KEC[KEC(Korea Electronics)]
|
| HN2S01F E001994 |
From old datasheet system
DIODE (LOW VOLTAGE HIGH SPEED SWITCHING APPLICATIONS)
|
Toshiba Corporation
Toshiba Semiconductor
|
| 1SS322 |
Diode Silicon Epitaxial Planar Type Low Voltage High Speed Switching
|
TOSHIBA
|
| 1SS391 |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching
|
TOSHIBA
|
| HN2S01FU |
Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application
|
TOSHIBA
|
| BUP302 Q67078-A4205-A2 |
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)
From old datasheet system
High Speed CMOS Logic Dual Decade Ripple Counters 16-PDIP -55 to 125 IGBT的（低正向压降高开关速度低尾电流的无闩锁雪崩额定
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 1SS399 |
Diode Silicon Epitaxial Planar Diode High Voltage, High Speed Switching Applications
|
TOSHIBA
|
