| PART |
Description |
Maker |
| TC514400ASJL-70 TC514400ASJL-80 TC514400AJL-10 TC5 |
70 ns, 4-bit generation dynamic RAM
80 ns, 4-bit generation dynamic RAM
100 ns, 4-bit generation dynamic RAM
|
TOSHIBA
|
| PCI9054 |
Next Generation 32-bit Pci Bus Mastering Interface Chip
|
PLX Technology
|
| MC68040V |
Third-Generation 32-Bit Low-Power Microprocessor
From old datasheet system
|
Motorola
|
| GM71C4256BJ GM71C4256BJ-70 GM71C4256B GM71C4256BZ- |
262144 word x 4 Bit CMOS DRAM
New Generation Dynamic RAM
|
GoldStar
LG[LG Semicon Co.,Ltd.]
http://
|
| XC4VLX40 XC4VLX100 XC4VLX15 XC4VLX160 XC4VLX200 XC |
High-performance logic applications solution
Virtex-4⑩ Family / newest generation FPGA
VIRTEX-4⒙ FAMILY / NEWEST GENERATION FPGA
Virtex-4??Family / newest generation FPGA
Virtex-4 Family / newest generation FPGA
Virtex-4?/a> Family / newest generation FPGA
|
XILINX[Xilinx, Inc]
http://
|
| MC100LVEL38 MC100LVEL38DW MC100EL38 MC100EL38DW ON |
, /6 Clock Generation Chip
2, 4/6 Clock Generation Chip
From old datasheet system
±2, ±4/6 Clock Generation Chip
|
Motorola, Inc
ONSEMI[ON Semiconductor]
|
| AT75C320 AT75C320NBSP |
Smart Internet Appliance Processor 32-BIT, RISC MICROCONTROLLER, PQFP16
The next-generation of high-performance processors designed for internet appliance applications, bui
From old datasheet system
|
Atmel, Corp.
ATMEL[ATMEL Corporation]
|
| APT8GT60KR |
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
Thunderbolt IGBT 600V 17A
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| TC514400AAZL-60 TC514400AJL-60 TC514400APL TC51440 |
60 ns, 4-bit generation dynamic RAM
1,048,576 x 4 BIT DYNAMIC RAM 1,048,576 × 4位动态随机存储器
|
TOSHIBA[Toshiba Semiconductor]
Toshiba Corporation
Toshiba, Corp.
|
| IRG4RC10UPBF IRG4RC10UTRPBF IRG4RC10UPBF-15 |
INSULATED GATE BIPOLAR TRANSISTOR
Generation 4 IGBT design provides tighter parameter distribution and higher effciency than previous generation
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
