| PART |
Description |
Maker |
| SGM2013 SGM2013N |
UHF BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
SONY [Sony Corporation]
|
| NE41137 |
N-Channel GaAs Dual Gate MES FET
N-CHANNEL GAASDUAL-GATE MESFET
|
California Eastern Laboratories
NEC[NEC]
|
| 3SK148 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
| 3SK149 |
GaAs N-Channel Dual-Gate MES FET
|
SONY
|
| SGM2016AM SGM2016AP SGM2016AM/AP |
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
| SGM2016AP SGM2016AM SGM2016AM_AP |
GaAs N-channel Dual-Gate MES FET
From old datasheet system
|
Sony
|
| SGM2016AN SGM2016 |
GaAs N-channel Dual-Gate MES FET
GaAs N-channel Dual-Gate MES FET
|
SONY[Sony Corporation]
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| 3SK177 3SK177-T1 3SK177-T2 |
For UHF TV tuner high frequency amplification
RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIELD-EFFECT TRANSISTOR 4 PIN MINI MOLD
|
NEC
|
| GN1021 |
GaAs N Channel MES Type IC
|
Matsushita Electric Works(Nais)
|
| NEZ7785-15D NEZ4450-15D NEZ4450-15DD NEZ3642-15D N |
20 characters x 4 Lines, 5x7 Dot Matric Character and Cursor 15瓦C波段砷化镓场效应管N沟道砷化镓场效应晶体
15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
