| PART |
Description |
Maker |
| M48Z129V-70PM M48Z129V-70PMTR M48Z129V-85PM M48Z12 |
5.0V OR 3.3V, 1 Mbit (128 Kb x 8) ZEROPOWER SRAM
|
STMicroelectronics
|
| M48Z512BV-85PM1 |
3.3 V, 4 Mbit (512 K x 8 bit) ZEROPOWER SRAM
|
STMicroelectronics
|
| M48Z129V-70PM1 M48Z129V-85PM1 M48Z129Y-70PM1 M48Z1 |
5.0 V or 3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER庐 SRAM
5.0 V or 3.3 V, 1 Mbit (128 Kb x 8) ZEROPOWER? SRAM
|
STMicroelectronics
|
| M48Z02-120PC1 M48Z02-120PC6 M48Z12-120PC1 M48Z12-2 |
CMOS 2K x 8 zeropower SRAM, 120ns
CMOS 2K x 8 zeropower SRAM, 200ns
|
SGS Thomson Microelectronics
|
| M27W101 M27W101-100B6TR M27W101-100F6TR M27W101-10 |
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器
1 Mbit 128Kb x8 Low Voltage UV EPROM and OTP EPROM 1兆位128KB x8低压紫外线EPROM和检察官办公室存储器
Hex Drivers 14-SOIC 0 to 70 1兆位28KB x8低压紫外线EPROM和检察官办公室存储器
64 Mbit 4Mb x16 3V Supply FlexibleROM Memory
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CY7C1474V33-167BGC CY7C1470V33-250AXC CY7C1470V33- |
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture
ECONOLINE: RQS & RQD - 1kVDC Isolation- Internal SMD Construction- UL94V-0 Package Material- Toroidal Magnetics- Efficiency to 80%
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 4M X 18 ZBT SRAM, 3.4 ns, PBGA165
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 1M X 72 ZBT SRAM, 3.4 ns, PBGA209
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL Architecture 2M X 36 ZBT SRAM, 3.4 ns, PBGA165
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| CY7C1387F-167BGC CY7C1387F-167BGI CY7C1387F-167BGX |
Replacement for Intersil part number 8100604EA. Buy from authorized manufacturer Rochester Electronics.
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 1M X 18 CACHE SRAM, 3 ns, PBGA165
18-Mbit (512K x 36/1 Mbit x 18) Pipelined DCD Sync SRAM 18兆位（为512k × 36 / 1兆位× 18）流水线双氰胺同步静态存储器
|
Cypress Semiconductor Corp.
|
| M48Z59Y M48Z59 |
64Kb (8K x 8) ZEROPOWER SRAM(64K零功耗SRAM)
64Kb (8K x 8) ZEROPOWER ? SRAM
|
意法半导
STMicro
|
| M27V101 M27V101-100B1TR M27V101-100B6TR M27V101-10 |
1-Bit to 2-Bit Address Driver With 3-State Outputs 80-TSSOP -40 to 85
1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM 1兆位28KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-SSOP -40 to 85 1兆位28KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
1 Mbit 128Kb x 8 Low Voltage UV EPROM and OTP EPROM 1兆位128KB × 8低压紫外线可擦写可编程只读存储器和OTP存储
2.5-V/3.3-V 16-Bit Buffers/Drivers With 3-State Outputs 48-TVSOP -40 to 85
1 Mbit (128Kb x 8) Low Voltage UV EPROM and OTP EPROM
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29W200 M29W200BB M29W200BT M29W200BB70N6T M29W200 |
2 Mbit 256Kb x8 or 128Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
KPSE 19C 19#20 PIN RECP
2 Mbit 256Kb x8 or 128Kb x16, Boot Block Low Voltage Single Supply Flash Memory 2兆位56Kb x828KB的x16插槽，引导块低压单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
