| PART |
Description |
Maker |
| BFP620E7764 |
RF-Bipolar - NPN Silicon Germanium RF Transistor, high gain low noise RF transistor in SOT343 Package
C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
|
Infineon Technologies AG
|
| DSS60600MZ4 DSS60600MZ4-13 |
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors 55V to 100V
6 A, 60 V, PNP, Si, POWER TRANSISTOR GREEN, PLASTIC PACKAGE-4
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
|
Diodes, Inc.
Diodes Incorporated
|
| OM6502ST OM6501ST |
INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC TO-257AA PACKAGE
|
List of Unclassifed Manufacturers
ETC
|
| BFS360L6 |
2 CHANNEL, S BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
RF-Bipolar - NPN Silicon TWIN type RF-Transistor in TSLP-6 package ideal for VCO Modules up to 4GHz
|
INFINEON TECHNOLOGIES AG
|
| IRGPC30UD2 |
600V Copack IGBT in a TO-3P (TO-247AC) package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| IRGIH50F |
1200V DISCRETE Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| 2N5664SMD |
NPN BIPOLAR TRANSISTOR IN A CERAMIC SURFACE MOUNT PACKAGE FOR HIGH REL APPLICATIONS
|
SEME-LAB[Seme LAB]
|
| IRGP20B120U-E |
1200V UltraFast 5-40 kHz Single IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| BFR360L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Oscillators and VCO Modules up to 4GHz
|
Infineon Technologies AG
|
| BFR340F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators
|
INFINEON[Infineon Technologies AG]
|
| IRGPH50KD2 2017 |
1200V Copack IGBT in a TO-3P (TO-247AC) package
From old datasheet system
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
