| PART |
Description |
Maker |
| GM71C4256 |
262,144 WORD x 4 BIT CMOS DYNAMIC RAM
|
LG Semicon Co.,Ltd.
|
| TC55W400XB5 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
|
TOSHIBA
|
| AK5362048W |
262,144 Word by 36 Bit CMOS Dynamic Random Access Memory
|
ACCUTEK MICROCIRCUIT CORPORATION
|
| MSM521004 |
262,144-Word x 4-Bit CMOS STATIC RAM
From old datasheet system
|
OKI
|
| HM514260LTT-10 HM514260LTT-7 HM514260LTT-8 HM51426 |
100ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
| TC55NEM216AFTN55 TC55NEM216AFTN70 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| TC55VCM216ASTN40 TC55VCM216ASTN55 |
262,144-WORD BY 16-BIT FULL CMOS STATIC RAM
TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| MSM27C402CZ |
262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM
|
OKI electronic components
OKI electronic componets
|
| HM514260DLJI-7 HM514260DLJI-8 |
70ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
80ns; V(cc): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 16-bit dynamirandom access memory
|
Hitachi Semiconductor
|
| V29C51002B-55J V29C51002T-55T V29C51002B-55T V29C5 |
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 85伏的CMOS闪存
2 MEGABIT 262,144 x 8 BIT 5 VOLT CMOS FLASH MEMORY 2兆位262,144 × 8伏的CMOS闪存
|
Mosel Vitelic, Corp.
|
| TC554161FTL TC554161FTL-10V TC554161FTL-70V TC5541 |
262,144-WORD BY 16-BIT STATIC RAM
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
