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K9W4G08U1M - 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

K9W4G08U1M_106384.PDF Datasheet


 Full text search : 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory


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HM5425161BTT-75A HM5425161BTT-75B HM5425401BTT-75A 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank
256M; 133MHz LVTTL interface SDRAM
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K847PH K827P8 K827PH K817P K817P1 K817P2 K817P3 K8 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
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TFUNK
Vishay Telefunken
Vishay Intertechnology,Inc.
M6MGD137W3 M6MGD137W33TP The M6MGD137W33TP is a Stacked micro Multi Chip Package (S- mMCP) that contents 128M-bit Flash memory and 32M-bit Mobile RAM in a 52-pin TSOP.
RENESAS
K9F1G08D0M K9F1G16D0M K9F1G08U0M-YCB00 Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TV07; Number of Contacts:37; Connector Shell Size:25; Connecting Termination:Crimp; Circular Shell Style:Jam Nut Receptacle; Body Style:Straight
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SAMSUNG SEMICONDUCTOR CO. LTD.
PD45128163-SU PD45128163G5-A75SU-9JF PD45128163G5- 128M-bit Synchronous DRAM 4-bank/ LVTTL WTR (Wide Temperature Range)
128M-bit Synchronous DRAM 4-bank, LVTTL WTR (Wide Temperature Range) 128兆位同步DRAM 4银行,LVTTL水树(宽温度范围
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K9K2G08U0A 256M x 8 Bit NAND Flash Memory
Samsung Electronic
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UPD23C128040BLGY-MKH UPD23C128040BLGY-MJH UPD23C12 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT (BYTE MODE) / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
(UPD23C128040BL / UPD23C128080BL) 128M-BIT MASK-PROGRAMMABLE ROM
; Connector Type A:DB37 Male; Connector Type B:DB37 Female; Cable Length:5ft; Approval Bodies:UL; Approval Categories:UL Style 2464 (300V 80 deg C -- cable only); Color:Chrome; For Use With:RS-449 Applications RoHS Compliant: Yes
Multiconductor Cable; Number of Conductors:2; Conductor Size AWG:12; No. Strands x Strand Size:Solid; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper; Jacket Color:Red RoHS Compliant: Yes
NEC Corp.
 
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