| PART |
Description |
Maker |
| CPH5826 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
| MCH5823 |
Pch SBD
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH5811 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| MCH5812 |
Nch SBD
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications
|
Sanyo Semicon Device
|
| ECH06A20 |
Schottky Barrier Diode
SBD
|
NIEC[Nihon Inter Electronics Corporation]
ETC[ETC]
|
| FCH20A04 |
Schottky Barrier Diode
SBD
|
Nihon Inter Electronics Corporation
ETC
|
| FCH08U10 NIHONINTERELECTRONICSCORP-FCH08U10 |
8A Avg 100 Volts SBD
Schottky Barrier Diode
|
NIEC[Nihon Inter Electronics Corporation]
|
| UPA508TE-T2 |
Nch enhancement-type MOS FET (On-chip schottky barrier diode(SBD))
|
NEC
|
| CPH5701 |
TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode DC/DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| MA2YD21 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| MA2YD23 |
Small-signal device - Diodes - Schottky Barrier Diodes(SBD)
Schottky Barrier Diodes (SBD)
|
Matsshita / Panasonic
|
| VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
