PART |
Description |
Maker |
M6MGB331S8BKT M6MGT331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation.
|
M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
PC74HC40105 |
4-Bit X 16-Word FIFO Register
|
NXP
|
74HCT7030 74HC7030 |
9-bit x 64-word FIFO register; 3-state
|
PHILIPS[Philips Semiconductors]
|
74HC7403D 74HC7403 74HC7403N |
4-Bit x 64-word FIFO register; 3-state
|
Philips
|
74HC7404N 74HC7404D 74HC7404 |
5-Bit x 64-word FIFO register; 3-state
|
Philips
|
M66288FP |
262144-word x 8-bit x 3-FIFO MEMORY
|
Renesas Electronics Corporation
|
74HC7030D 74HC7030N 74HCT7030D 74HCT7030N |
74HC/HCT7030; 9-bit x 64-word FIFO register; 3-state
|
NXP Semiconductors N.V. Philips
|
M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
MSM27C1655CZ |
524,288-Double Word x 32-Bit or 1,048,576-Word x 16-Bit 4-Double Word x 32-Bit or 8-Word x 16-Bit Page Mode One Time PROM 524,288 -双字× 32位或1048576字16 -双字× 32位或8字16位页面模式一次性可编程
|
OKI electronic components OKI electronic componets OKI SEMICONDUCTOR CO., LTD.
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