| PART |
Description |
Maker |
| KM416C254D KM416V254D KM416C254DJL-5 KM416C254DJL- |
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 50ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 70ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh
256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 50ns, self-refresh
|
Samsung Electronic
|
| 6N140A-100 HCPL-6730 HCPL-177K-B600 HCPL-5731 HCPL |
5962-9800201KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-573K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981001XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A/883B · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401ZC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401XA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401FC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401EA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
8302401EC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978504K2A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978503KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-89785022A · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501ZA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6750 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5700 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-570K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6731 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-673K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6751 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-6730 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-5701 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-675K · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-300 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-177K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501YC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501YA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501PC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8978501PA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-570K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
6N140A-600 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KYC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KPC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KYA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KPA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-8981002KXA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KFC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KEC · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
5962-9800201KEA · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
HCPL-573K-100 · Hermetically Sealed, Low IF, Wide Vcc, High Gain Optocouplers
(HCPL-xxxx) Hermetically Sealed / Low IF / Wide VCC / High Gain Optocouplers
3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits
3.5MM M-M STREO AUDIO 30CBLE; 24AWG, BLCK MOLDED
3.5MM M-M STREO AUDIO 25CBLE; 24AWG, BLCK MOLDED
LOGIC-GATE-OUTPUT OPTOCOUPLER 逻辑门输出光耦合
Hermetically Sealed. Low IF. Wide Vcc. High Gain Optocouplers 密封。低中频。宽的VCC。高增益光电耦合
Hermetically Sealed, Low I F ,Wide V CC , High Gain Optocouplers(密封，小电流，宽电压，高增益光耦合 密封，低中频，宽V CC的，高增益光耦合器（密封，小电流，宽电压，高增益光耦合器）
NPN-OUTPUT DC-INPUT OPTOCOUPLER npn型输出DC -输入光耦合
DARLINGTON-NPN-OUTPUT DC-INPUT OPTOCOUPLER 达林 npn型输出DC -输入光耦合
Hermetically Sealed, Low IF, Wide VCC, High Gain Optocouplers 密封，中频，宽虚拟通道连接，高增益低光
3V Voltage Monitoring, Low-Cost, µP Supervisory Circuits 密封。低中频。宽的VCC。高增益光电耦合
Receptacle With A Standard Tail 达林 npn型输出DC -输入光耦合
1 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps
4 CHANNEL LOGIC OUTPUT OPTOCOUPLER, 0.1 Mbps
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Agilent Technologies, Inc.
Avago Technologies, Ltd.
Analog Devices, Inc.
BI Technologies, Corp.
Coilcraft, Inc.
Harwin PLC
AGILENT TECHNOLOGIES INC
|
| UT61L256JC-10 UT61L256JC-12 UT61L256JC-15 UT61L256 |
Access time: 10 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 12 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 15 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
Access time: 8 ns, 32 K x 8 Bit high speed low Vcc CMOS SRAM
|
UTRON Technology
|
| KM62U256CLTG-10L KM62U256CLTG-8L KM62U256CLG-10L K |
32Kx8 bit Low Power & Low Vcc CMOS Static RAM
32Kx8 bit Low Power AND Low Vcc CMOS Static RAM
|
ETC
SAMSUNG[Samsung semiconductor]
|
| M38230G4-XXXFP M38230G4-XXXHP M38231G4-XXXHP M3823 |
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 3.1 to 3.6 V
18-Mbit (512K x 36/1M x 18) Pipelined SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL(TM) Architecture; Architecture: NoBL, Flow-through; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 3.1 to 3.6 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 36 Mb; Organization: 512Kb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 1Mb x 72; Vcc (V): 3.1 to 3.6 V
72-Mbit (2M x 36/4M x 18/1M x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit (1M x 36/2M x 18/512K x 72) Pipelined Sync SRAM; Architecture: Standard Sync, Pipeline SCD; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM; Architecture: Standard Sync, Flow-through; Density: 18 Mb; Organization: 1Mb x 18; Vcc (V): 3.1 to 3.6 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit(2M x 36/4M x 18/1M x 72) Pipelined SRAM with NoBL(TM) Architecture; Architecture: NoBL, Pipeline; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 2.4 to 2.6 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit QDR(TM)-II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
SINGLE-CHIP 8-BIT CMOS MICROCOMPUTER 单芯8位CMOS微机
Sync SRAM; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
36-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 36 Mb; Organization: 1Mb x 36; Vcc (V): 1.7 to 1.9 V 单芯位CMOS微机
72-Mbit DDR-II SRAM 2-Word Burst Architecture; Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V
36-Mbit QDR(TM)-II SRAM 2-Word Burst Architecture; Architecture: QDR-II, 2 Word Burst; Density: 36 Mb; Organization: 2Mb x 18; Vcc (V): 1.7 to 1.9 V
|
Renesas Electronics Corporation.
Renesas Electronics, Corp.
|
| CA3318CE CA3318 CA3318CM CA3318CD FN3103 |
From old datasheet system
CMOS Video Speed, 8-Bit, Flash A/D Converter
CMOS Video Speed/ 8-Bit/ Flash A/D Converter
M16C/Tiny Series, 28 Group, 1-ch IEBus, 3-phase PWM, 1-ch 16-bit IC/OC 85F0G; Vcc= 2.7 to 5.5 volts, Temp= -40 to 85 C; Package: PTLG0085JB-A
|
INTERSIL[Intersil Corporation]
|
| CY14B104LA-ZS25XIT CY14B104NA-BA20XI CY14B104NA-BA |
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 512Kb x 8; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: TSOP 512K X 8 NON-VOLATILE SRAM, 25 ns, PDSO44
4 Mbit (512K x 8/256K x 16) nvSRAM; Organization: 256Kb x 16; Vcc (V): 2.7 to 3.6 V; Density: 4 Mb; Package: FBGA
|
Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
|
| X2784AG-08TT I2781A-08SR I2781A-08ST I2781A-08TR I |
PS MEDICAL SWITCHER 15V .73A 156 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 156 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 312 MHz, OTHER CLOCK GENERATOR, PDSO8
General Purpose EMI Reduction IC 78 MHz, OTHER CLOCK GENERATOR, PDSO8
PS LINEAR DUAL 5V@6A 9-15@2.5A
ICs for Inductive Proximity Switches; Package: P-DSO-14; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 0.9 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
ICs for Inductive Proximity Switches; Package: P-DSO-8; VCC (min): 5.0 V; VCC (max): 30.0 V; ICC (max): 1.0 mA; IQ (max): 50.0 mA; Operating Temperature (min): -25.0 degC;
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
http://
|
| VCC1-A3O-34M368 VCC1-A3O-34M816 VCC1-A3O-34M56 VCC |
VCXO, CLOCK, 34.368 MHz, CMOS OUTPUT
VCXO, CLOCK, 34.816 MHz, CMOS OUTPUT
VCXO, CLOCK, 34.56 MHz, CMOS OUTPUT
VCXO, CLOCK, 70.626 MHz, CMOS OUTPUT
VCXO, CLOCK, 69.632 MHz, CMOS OUTPUT
VCXO, CLOCK, 34.45 MHz, CMOS OUTPUT
VCXO, CLOCK, 70 MHz, CMOS OUTPUT
VCXO, CLOCK, 97.776 MHz, CMOS OUTPUT
VCXO, CLOCK, 53.33 MHz, CMOS OUTPUT
VCXO, CLOCK, 19.53 MHz, CMOS OUTPUT
VCXO, CLOCK, 53.125 MHz, CMOS OUTPUT
VCXO, CLOCK, 89.97804 MHz, CMOS OUTPUT
VCXO, CLOCK, 89.472 MHz, CMOS OUTPUT
VCXO, CLOCK, 89.512 MHz, CMOS OUTPUT
VCXO, CLOCK, 48.33008
VCXO, CLOCK, 8.192 MHz, CMOS OUTPUT
VCXO, CLOCK, 14.4 MHz, CMOS OUTPUT
VCXO, CLOCK, 125.01 MHz, CMOS OUTPUT
VCXO, CLOCK, 106.25 MHz, CMOS OUTPUT
VCXO, CLOCK, 125 MHz, CMOS OUTPUT
VCXO, CLOCK, 39.497 MHz, CMOS OUTPUT
VCXO, CLOCK, 103.68 MHz, CMOS OUTPUT
VCXO, CLOCK, 35.5 MHz, CMOS OUTPUT
VCXO, CLOCK, 12.222 MHz, CMOS OUTPUT
VCXO, CLOCK, 51.156 MHz, CMOS OUTPUT
VCXO, CLOCK, 52.5 MHz, CMOS OUTPUT
VCXO, CLOCK, 78 MHz, CMOS OUTPUT
VCXO, CLOCK, 72 MHz, CMOS OUTPUT
VCXO, CLOCK, 27 MHz, CMOS OUTPUT
VCXO, CLOCK, 36.5 MHz, CMOS OUTPUT
VCXO, CLOCK, 42.4 MHz, CMOS OUTPUT
VCXO, CLOCK, 112.5 MHz, CMOS OUTPUT
VCXO, CLOCK, 115.2 MHz, CMOS OUTPUT
VCXO, CLOCK, 127 MHz, CMOS OUTPUT
VCXO, CLOCK, 116.64 MHz, CMOS OUTPUT
VCXO, CLOCK, 110 MHz, CMOS OUTPUT
VCXO, CLOCK, 16.61 MHz, CMOS OUTPUT
VCXO, CLOCK, 50 MHz, CMOS OUTPUT
VCXO, CLOCK, 10.24 MHz, CMOS OUTPUT
VCXO, CLOCK, 114 MHz, CMOS OUTPUT
VCXO, CLOCK, 20 MHz, CMOS OUTPUT
VCXO, CLOCK, 100 MHz, CMOS OUTPUT
VCXO, CLOCK, 20.516 MHz, CMOS OUTPUT
VCXO, CLOCK, 128 MHz, CMOS OUTPUT
VCXO, CLOCK, 12.5 MHz, CMOS OUTPUT
VCXO, CLOCK, 21.71055 MHz, CMOS OUTPUT
VCXO, CLOCK, 21.504 MHz, CMOS OUTPUT
VCXO, CLOCK, 36.86 MHz, CMOS OUTPUT
VCXO, CLOCK, 33.3 MHz, CMOS OUTPUT
VCXO, CLOCK, 12 MHz, CMOS OUTPUT
VCXO, CLOCK, 41.472 MHz, CMOS OUTPUT
VCXO, CLOCK, 67.5 MHz, CMOS OUTPUT
VCXO, CLOCK, 41.657 MHz, CMOS OUTPUT
VCXO, CLOCK, 42.5 MHz, CMOS OUTPUT
VCXO, CLOCK, 42 MHz, CMOS OUTPUT
VCXO, CLOCK, 47.404 MHz, CMOS OUTPUT
VCXO, CLOCK, 47.197 MHz, CMOS OUTPUT
VCXO, CLOCK, 47.40437 MHz, CMOS OUTPUT
VCXO, CLOCK, 12.2725 MHz, CMOS OUTPUT
VCXO, CLOCK, 28.8 MHz, CMOS OUTPUT
VCXO, CLOCK, 12.352 MHz, CMOS OUTPUT
VCXO, CLOCK, 28 MHz, CMOS OUTPUT
VCXO, CLOCK, 120 MHz, CMOS OUTPUT
VCXO, CLOCK, 2.048 MHz, CMOS OUTPUT
VCXO, CLOCK, 2 MHz, CMOS OUTPUT
VCXO, CLOCK, 24.54 MHz, CMOS OUTPUT
VCXO, CLOCK, 17.734 MHz, CMOS OUTPUT
VCXO, CLOCK, 15.974 MHz, CMOS OUTPUT
|
Vectron International, Inc.
|
| MX25R1635F |
Wide Vcc Range, 16M-BIT
|
Macronix International
|
|
