| PART |
Description |
Maker |
| FM2G75US60 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 75A条一（c
Molding Type Module
|
Sharp, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRGTI050U06 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 50A I(C)
|
|
| IXGQ100N60Y4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C)
|
|
| DIM200WHS12-E000 |
Half Bridge IGBT Module 200 A, 1200 V, N-CHANNEL IGBT
|
Dynex Semiconductor, Ltd.
|
| BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五（巴西）国际消费电子展| 150A一（c
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
| VII125-12G4 |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 125A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五（巴西）国际消费电子展| 125A条一（c
|
IXYS, Corp.
|
| CM100DY12H |
TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 600V V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 600V的五（巴西）国际消费电子展| 100号A一（c
|
Mitsubishi Electric, Corp.
|
| GP350MHB06S |
Half Bridge IGBT Module
|
DYNEX[Dynex Semiconductor]
|
| SIM200D12SV3 |
HALF-BRIDGE IGBT MODULE
|
SemiWell Semiconductor
|
| DIM250PHM33-TL000 DIM250PHM33-TL000-15 |
Half Bridge IGBT Module
|
Dynex Semiconductor
|
| BSM300GA170DN2E3166 300A17E2 |
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Enlarged diode area)
From old datasheet system
|
Siemens Semiconductor Group
Infineon
|
| GA200HS60S |
600V DC-1 kHz (Standard) Half-Bridge IGBT in a INT-A-Pak package 600V的直千赫的廉政（标准）半桥IGBT à - Pak封装
HALF-BRIDGE IGBT INT-A-PAK
|
Ecliptek, Corp.
IRF[International Rectifier]
|
