| PART |
Description |
Maker |
| PHT41410B |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Teledyne Technologies I...
|
| AT-41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AT-41485 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
|
Agilent(Hewlett-Packard...
|
| AA028N1-99 |
230 GHz Low Noise Amplifier
GT 14C 10#12 4#16 SKT PLUG
23-30 GHz Low Noise Amplifier
|
Alpha Industries Inc
Alpha Industries, Inc.
ALPHA[Alpha Industries]
http://
|
| Q62702-F655 BFQ60 |
LOW NOISE NPN SILICON MICROVAVE TRANSISTOR UP TO 2 GHz
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| AT-41435 AT41435 |
Up to 6 GHz Low Noise Silicon Bipolar Transistor
Search -----> AT-41435
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| AMMC-6231 |
AMMC-6231 · 16-32 GHz Low Noise Amplifier
16?2 GHz Low Noise Amplifier
|
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
|
| BAT15-098 Q62702-A0062 BAT15_98 |
From old datasheet system
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) 硅肖特基二极管（星展混合器的应用10 GHz低噪声系数低屏障型）
|
Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| UPC1676G-T1 |
1.2 GHz BANDWIDTH LOW NOISE SILICON MMIC AMPLIFIER 1.2千兆赫带宽，低噪声硅MMIC放大
|
NEC, Corp.
|
| BAT15-04 BAT15_04 Q62702-A504 |
Silicon Dual Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) 硅双肖特基二极管（星展混频器应用12 GHz低噪声系数低屏障型）
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-F1587 BF1012W |
From old datasheet system
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
|
SIEMENS[Siemens Semiconductor Group]
|
| TMT-4-2002 |
Temperature Compensated Low Noise Amplifier 2 GHz - 4 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
