| PART |
Description |
Maker |
| PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦，860-960兆赫GOLDMOS场效应晶体管
|
ERICSSON[Ericsson]
Ericsson Microelectronics
|
| MRF377MRF377R3MRF377R5 |
470–860 MHz, 240 W, 32 V Lateral N–Channel RF Power MOSFET
|
Motorola
|
| PTF102028 |
18 Watts, 86060 MHz GOLDMOS Field Effect Transistor
18 Watts 860-960 MHz GOLDMOS Field Effect Transistor
18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| PTF10036 |
85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
85 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson Microelectronics
|
| PTB20005 |
15 Watts 860-900 MHz Cellular Radio RF Power Transistor
15 Watts, 860-900 MHz Cellular Radio RF Power Transistor
15 Watts/ 860-900 MHz Cellular Radio RF Power Transistor
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| MRF377R5 MRF377R3 MRF377 |
MRF377, MRF377R3, MRF377R5 470-860 MHz, 240 W, 32 V Lateral N-Channel RF Power MOSFET
RF POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| PTF10020 |
125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
|
Ericsson
|
| PTF10100 |
165 Watts/ 860-900 MHz LDMOS Field Effect Transistor
165 Watts 860-900 MHz LDMOS Field Effect Transistor
165 Watts, 860-900 MHz LDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
| PTVA043502FC |
Thermally-Enhanced High Power RF LDMOS FETs 350 W, 50 V, 470 ?860 MHz
|
Infineon Technologies A...
|
| MAFRIN0494 |
Single Junction Gull Wing Circulator 860 MHz-960 MHz
|
M/A-COM Technology Solutions, Inc.
|
