| PART |
Description |
Maker |
| BLF872 BLF872-2015 |
UHF power LDMOS transistor
UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors
Quanzhou Jinmei Electro...
|
| BLW32 |
UHF linear power transistor
|
New Jersey Semi-Conductor Products, Inc.
|
| TPV598 |
UHF LINEAR POWER TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|
| BLW98 |
UHF linear power transistor
|
New Jersey Semi-Conductor Products, Inc.
|
| BLV57 |
UHF linear push-pull power transistor
|
NXP Semiconductors
|
| PTB20188 |
4 Watts P-Sync, 470-860 MHz UHF TV Linear Power Transistor
|
ERICSSON[Ericsson]
|
| BLF2022-40 |
UHF power LDMOS transistor UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
Philips Semiconductors
|
| 2SC4186 2SC4186T63 2SC4186T62 2SC4186T64 |
TRANSISTOR | BJT | NPN | 12V V(BR)CEO | 30MA I(C) | SOT-323
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
UHF OSCILLATOR AND UHF MIXER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD
|
NEC Corp.
NEC[NEC]
|
| MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
| BFR106 Q62702-F1219 |
NPN Silicon RF Transistor (For low noise, high-gain amplifiers For linear broadband amplifiers) UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-236
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers For linear broadband amplifiers)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
