PART |
Description |
Maker |
MCR12M ON1804 MCR12N MCR12D MCR12-D |
From old datasheet system Silicon Controlled Rectifiers SCRs 12 AMPERES RMS 600 thru 800 VOLTS Sillicon Controlled Rectifiers Reverse Blocking Thyristors
|
ONSEMI[ON Semiconductor]
|
2N5064RLRA 2N5064RLRM 2N5064RLRMG 2N5061RLRM 2N506 |
Thyristor .8A 100V Connector Housing; Series:MicroClasp; No. of Contacts:3; Gender:Female; Body Material:Nylon 6/6; No. of Rows:1; Pitch Spacing:0.079" RoHS Compliant: Yes 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 100 V, SCR, TO-92 Sensitive Gate Silicon Controlled Rectifiers 0.8 A, 60 V, SCR, TO-92 Silicon Controlled Rectifier .8A 25V Thyristor .8A 200V Thyristor .8A 50V
|
ONSEMI[ON Semiconductor]
|
MCR310-010 MCR310-D |
Silicon Controlled Rectifier 10A 800V Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors
|
ON Semiconductor
|
2N3670 2N4103 2N3669 2N3668 |
12.5A silicon controlled rectifier. Vrm(non-rep) 330V. 12.5A SILICON CONTROLLED RECTIFIERS
|
General Electric Solid State GE[General Semiconductor] GE Security, Inc.
|
CBR3A-P060 CBR10A-J080 CBR6A-080 CBR10A-J020 CBR10 |
Bridge Rectifiers, Controlled Avalanche 1.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE Bridge Rectifiers, Controlled Avalanche 10 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE Bridge Rectifiers, Controlled Avalanche 1.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE Bridge Rectifiers, Controlled Avalanche 3 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE Bridge Rectifiers, Controlled Avalanche 3 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE Bridge Rectifiers, Controlled Avalanche 3 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE Bridge Rectifiers, Controlled Avalanche 3 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE Bridge Rectifiers/ Controlled Avalanche Leaded Bridge Rectifier Controlled Avalanche
|
Central Semiconductor, Corp. Central Semiconductor Corp. CENTRAL[Central Semiconductor Corp]
|
2N1795F 2N1798F 2N1792F 2N1793F 2N1794F 2N1797F 2N |
Silicon Controlled Rectifiers (fase) Silicon Controlled Rectifier; Package: TO-83; IT (Av) (A): 70; VTM (V): 2.1; VGT (V): 3; IGT (µA): 70000; tq (nsec): 40000; Vrrm (V): 400; 110 A, SCR, TO-208AD
|
Microsemi Corporation Microsemi, Corp.
|
MCR264-4-D MCR264-4 |
Silicon Controlled Rectifier Reverse Blocking Thyristor(40A400V硅控整流器反向截止晶闸管) 40 A, 200 V, SCR, TO-220AB Silicon Controlled Rectifiers Reverse Blocking Thyristors
|
ON Semiconductor
|
C106 C106S C106A C106B C106C C106D C106E C106F C10 |
4A sensitive-gate silicon controlled rectifier. Vrrm 700V. 4-A Sensitive-Gate Silicon Controlled Rectifiers
|
General Electric Solid State GESS[GE Solid State] http://
|
WCP10C60 |
Silicon Controlled Rectifiers
|
Shenzhen Winsemi Microelectronics Co., Ltd
|
MCR218-10 MCR218-3 MCR218-6 MCR218-2 MCR218-4 MCR2 |
SILICON CONTROLLED RECTIFIERS
|
Digitron Semiconductors
|