| PART |
Description |
Maker |
| IDT71V2576S IDT71V2578S IDT71V2578YS150BG IDT71V25 |
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PBGA119
IC LOGIC 3253 LOW-VOLTAGE DUAL 1-OF-4 FET MULTIPLEXER/DEMULTIPLEXER -40 85C TSSOP-16 96/TUBE 256K X 18 CACHE SRAM, 4.2 ns, PBGA119
RECTIFIER FAST-RECOVERY SINGLE 1A 200V 30A-ifsm 1V-vf 50ns 5uA-ir DO-41 5K/REEL-13 128K X 36 CACHE SRAM, 4.2 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K的米656 × 18 3.3同步SRAM.5VI / O的流水线输出，脉冲计数器，单周期取消
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PBGA165
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PBGA119
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PQFP100
128K X 36, 256K X 18 3.3V Synchronous SRAMs 2.5V I/O, Pipelined Outputs, Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PQFP100
IC LOGIC 3257 LOW-VOLTAGE 4-BIT 1-OF-2 FET MULTIPLEXER/DEMULTIPLEXER -40 85C QSOP-16 97/TUBE
|
http://
Integrated Device Technology, Inc.
|
| GS840E18 GS840E36B-166I GS840E18B-166I GS840E32T-1 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8.5 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
| MX23C2100 23C2100 MX23C2100PC-15 MX23C2100PC-12 |
2M-BIT 256K x 8/128K x 16 CMOS MASK ROM
From old datasheet system
2M-BIT [256K x 8/128K x 16] CMOS MASK ROM
|
MCNIX[Macronix International]
Macronix 旺宏
|
| IS61VPS12836A-250B3I |
128K x 32, 128K x 36, 256K x 18 4 Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM 128K X 36 CACHE SRAM, 2.6 ns, PBGA165
|
Integrated Silicon Solution, Inc.
|
| IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
|
IDT
Integrated Device Technology, Inc.
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| IS24L256-2PLI IS24L256-2PI IS24L256 IS24L256-2GI I |
128K-bit/ 256K-bit 2-WIRE SERIAL CMOS EEPROM
|
Integrated Silicon Solution, Inc
|
| MX28F2100BTC-90 MX28F2100BMC-70 MX28F2100BTC-70 MX |
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
|
PROM
|
| MCM63F737KZP8.5 MCM63F819KZP8.5 MCM63F737KZP8.5R M |
128K x 36 and 256K x 18 Bit Flow??hrough BurstRAM Synchronous Fast Static RAM
128K x 36 and 256K x 18 Bit Flow?Through BurstRAM Synchronous Fast Static RAM
|
Motorola, Inc
|
| S524AD0XF1 S524AD0XD1 |
128K/256K-bit Serial EEPROM for Low Power
|
SAMSUNG SEMICONDUCTOR CO. LTD.
http://
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MX28F2100T 28F2100T |
2M-BIT [256K x 8/128K x 16] CMOS FLASH MEMORY
From old datasheet system
|
Macronix 旺宏
|
|
