| PART |
Description |
Maker |
| ACTS512K8 ACT-S512K8N-055P4T ACT-S512K8N-055P4Q AC |
ACT-S512K8 High Speed 4 Megabit Monolithic SRAM
|
AEROFLEX[Aeroflex Circuit Technology]
|
| ACT-SF41632N-39P5Q ACT-SF41632N-39P5I ACT-SF41632N |
ACT-SF41632 High Speed 128Kx32 SRAM / 512Kx32 Flash Multichip Module
|
Aeroflex Circuit Techno...
|
| ACT-F1M32B-120F14M ACT-F1M32B-120F14Q ACT-F1M32B-1 |
ACT-F1M32 High Speed 32 Megabit Boot Block FLASH Multichip Module
|
Aeroflex Circuit Techno...
|
| ACT-S4M32A-100F1Q ACT-D4M32A-100F1Q ACT-E4M32A-100 |
ACT-F4M32A High Speed 128 Megabit Sector Erase FLASH Multichip Module
|
Aeroflex Circuit Techno...
|
| ACT-PS512K8 ACT-9S512K8N-010L2I ACT-9S512K8N-010L2 |
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM
16-Bit Delta-Sigma ADC with internal reference, PGA and oscillator. I2C Serial Interface 6-SOT-23
512K X 8 CACHE SRAM, 17 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36
512K X 8 CACHE SRAM, 25 ns, PDSO36 0.930 X 0.405 INCH, 0.148 INCH HEIGHT, PLASTIC, SOJ-36
ACT-PS512K8 High Speed 4 Megabit Plastic Monolithic SRAM 行为PS512K8高兆位单片SRAM的塑
512K X 8 CACHE SRAM, 15 ns, PDSO36
512K X 8 CACHE SRAM, 20 ns, PDSO36
|
AEROFLEX[Aeroflex Circuit Technology]
Aeroflex Inc.
Aeroflex, Inc.
Aeroflex Circuit Techno...
|
| MBM29F016A-12 MBM29F016A-90PFTR MBM29F016A-12PFTR |
16M (2M X 8) BIT
2.2A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85
1.65A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC -40 to 85
|
Fujitsu Component Limited.
Fujitsu Limited
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| MB89P637-SH MB89636P-SH MB89636PF MB89636PFM MB896 |
0.22A, 2.7-5.5V Single Hot-Swap IC Hi-Side MOSFET, Fault Report, Act-High Enable 8-SOIC
8-bit Proprietary Microcontroller
|
Fujitsu Limited
Fujitsu Component Limited.
|
| TPC8006-H |
Field Effect Transistor Silicon N Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Portable Equipment Applications Notebook PC Applications
|
TOSHIBA
|
| AT27BV256-90TI AT27BV256 AT27BV256-12JC AT27BV256- |
High Speed CMOS Logic Dual 4-Stage Binary Counters 14-SOIC -55 to 125 32K X 8 OTPROM, 150 ns, PDSO28
High Speed CMOS Logic Dual 4-Input NOR Gates 14-SOIC -55 to 125
High Speed CMOS Logic Dual Decade Ripple Counters 16-SOIC -55 to 125
High Speed CMOS Logic Dual 4-Input NOR Gates 14-PDIP -55 to 125
256K 32K x 8 Unregulated Battery-Voltage High Speed OTP CMOS EPROM
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| W26L010A W26L010A-10 W26L010A-12 W26L010AJ-10 W26L |
JT 10C 10#20 PIN RECP
From old datasheet system
64K X 16 High Speed CMOS Static RAM
HIGH SPEED SRAM 64Kx16
|
Winbond Electronics Corp
WINBOND[Winbond]
|
| SH0R3D42 |
HIGH SPEED THYRISTOR SILICON PLANAR TYPE HIGH SPEED SWITCHING AND CONTROL APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
