| PART |
Description |
Maker |
| SCVN0345N1 SJVN0345N1 SJVN0345N2 SXVN0345N1 SXVN03 |
2.5 A, 450 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3
350 mA, 450 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-39
|
Supertex, Inc.
|
| IRF433 |
4 A, 450 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
|
HARRIS SEMICONDUCTOR
|
| IRF451 IRF541 RF343 IRF351 IRF433 IRF712 |
13 A, 450 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
27 A, 60 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
8 A, 350 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
15 A, 350 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
4 A, 450 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204
1.3 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
|
VISHAY SILICONIX
|
| FK10UM-9 |
HIGH-SPEED SWITCHING USE 10 A, 450 V, 0.92 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Powerex, Inc.
POWEREX[Powerex Power Semiconductors]
|
| CF1/2LM5203G CF1/2LM5203J |
RESISTOR, CARBON FILM, 0.5 W, 2 %, 450 ppm, 20000 ohm, THROUGH HOLE MOUNT AXIAL LEADED
RESISTOR, CARBON FILM, 0.5 W, 5 %, 450 ppm, 20000 ohm, THROUGH HOLE MOUNT AXIAL LEADED
|
KOA Speer Electronics,Inc.
|
| IRF9Z34-001PBF IRF9543-003PBF IRF9543-005PBF IRF95 |
18 A, 60 V, 0.14 ohm, P-CHANNEL, Si, POWER, MOSFET
16 A, 80 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
3 A, 80 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
9.7 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET
2 A, 500 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET
2.1 A, 1000 V, 6.7 ohm, N-CHANNEL, Si, POWER, MOSFET
2.8 A, 800 V, 3.8 ohm, N-CHANNEL, Si, POWER, MOSFET
10 A, 400 V, 0.55 ohm, N-CHANNEL, Si, POWER, MOSFET
19 A, 80 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET
7 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET
2.2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET
1.7 A, 400 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Vishay Intertechnology, Inc.
Intersil, Corp.
VISHAY INTERTECHNOLOGY INC
|
| UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS |
MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK
MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK
MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8
MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6
MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制
MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
|
意法半导
STMicroelectronics N.V.
|
| AD5624 AD5624BRMZ-REEL7 AD5664BRMZ-REEL7 AD5624BCP |
2.7 V to 5.5 V, 450 μA, Rail-to-Rail Output, Quad, 12-Bit <span style="text-transform: lowercase"> <em>nano</span></em>DAC<sup>?</sup>
2.7 V to 5.5 V, 450 µA, Rail-to-Rail Output, Quad, 12-/16-Bit nanoDACs®
2.7 V to 5.5 V, 450 レA, Rail-to-Rail Output, Quad, 12-/16-Bit nanoDACs
2.7 V to 5.5 V, 450 μA, Rail-to-Rail Output, Quad, 12-/16-Bit nanoDACs
|
AD[Analog Devices]
|
| IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲，450 V/500 V
Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| APT6045SVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 600V 15A 0.450 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| FQPF6N45 |
4 A, 450 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
450V N-Channel MOSFET
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| M57788HR |
MITSUBISHI RF POWER MODULE 450-470MHz, 13.5V, 47W, FM MOBILE RADIO
450-470MHz / 13.5V / 47W / FM MOBILE RADIO
450-470MHz, 13.5V, 47W, FM MOBILE RADIO 45070MHz3.5V7W配合，调频移动通信
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Mitsubishi Electric, Corp.
|
|
