| PART |
Description |
Maker |
| MGFC39V7177A |
7.1-7.7GHz BAND 8W Internally Matched GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFX36V0717 |
10.7-11.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC39V7177A04 MGFC39V7177A |
7.1 ~ 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| MGFC39V7177A |
7.1 - 7.7GHz BAND 8W INTERNALLY MATCHED GaAs FET 7.1 - 7.7GHz波段8瓦特内部匹配砷化镓场效应
|
Mitsubishi Electric, Corp.
Mitsubishi Electric Semiconductor
|
| MLM307 |
Interna;;y Compensated Monolithic Operational Amplifier
|
Motorola Semiconductor
|
| RFRX1702 |
GaAs MMIC IQ Downconverter 17.7GHz to 19.7GHz
|
RF Micro Devices
|
| SZM-2166Z SZM-2166Z-EVB1 SZM-2166Z-EVB2 SZM-2166Z- |
2.3-2.7GHz 2W Power Amplifier
|
SIRENZA MICRODEVICES
|
| SKY77916-11 |
Tx-Rx FEM for Quad-Band GSM /GPRS / EDGE w/ 14 Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
|
Skyworks Solutions Inc.
|
| MGFS39E2527A-01 |
2.5-2.7GHz HBT Integrated Circuit
|
Mitsubishi Electric Semiconductor
|
| SY87724L08 SY87724LHEI SY87724LHEY SY87724LHG |
3.3V AnyRate MUX/DEMUX Up to 2.7GHz
|
Micrel Semiconductor
|
