| PART |
Description |
Maker |
| 2SC3981 2SC3981A |
TRANS NPN 40V 350MW SMD SOT23 5 A, 800 V, NPN, Si, POWER TRANSISTOR
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
|
Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| 2SC2429 |
SILICON HIGH SPEED TRIPLE DIFFUSED NPN POWER TRANSISTOR 10 AMP,400 VOLT
From old datasheet system
SILICON HIGH SPPED POWER TRANSISTORS 高硅SPPED功率晶体
|
Fujitsu Component Limited.
Fujitsu Microelectronics
Fujitsu Media Devices Limited
Toshiba Semiconductor
Fujitsu Limited
Fujitsu, Ltd.
|
| BUL53B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR 12 A, 250 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
TT electronics Semelab, Ltd.
|
| 2SC3978A |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 2 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220F
|
Panasonic, Corp.
|
| 2SC4953 |
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 3 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
|
Panasonic Industrial Solutions
PANASONIC[Panasonic Semiconductor]
|
| BUB323ZT4G BUB323Z_05 BUB323Z BUB323ZG BUB323ZT4 B |
NPN Silicon Power Darlington High Voltage Autoprotected D2PAK for Surface Mount 10 A, 350 V, NPN, Si, POWER TRANSISTOR
|
ONSEMI[ON Semiconductor]
|
| MP4304 |
Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (high gain power transistor 4 in 1)
|
Toshiba Semiconductor
Toshiba Corporation
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|
| KSC5302D KSC5302DTU |
NPN Silicon Transistor
High Voltage High Speed Power Switch Application
|
FAIRCHILD[Fairchild Semiconductor]
|
| BUL54B |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| BUL70A |
ADVANCED DISTRIBUTED BASE DESIGN HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR
|
SemeLAB
SEME-LAB[Seme LAB]
|
