| PART |
Description |
Maker |
| 1SV312 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| JDP2S02AFS |
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
TOSHIBA Diode Silicon Epitaxial PIN Type
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5703 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SA2056 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
|
TOSHIBA
|
| TPC8206 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| 1SV128 |
VHF~UHF BAND RF ATTENUATOR APPLICATIONS
|
Guangdong Kexin Industrial Co.,Ltd
|
| JDP4P02U07 JDP4P02U |
UHF~VHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| 1SV252 |
VHF~UHF Band RF Attenuator Applications
|
Guangdong Kexin Industrial Co.,Ltd
|
| RN6003 |
Transistor Silicon NPN Epitaxial Type (PCT Process) Motor Drive Circuit Applications Power Amplifier Applications Power Switching Applications
|
TOSHIBA
|
