| PART |
Description |
Maker |
| 10-200RV 14-200RV 14-300RV 10-250RV 10-100RV 8-200 |
GASDRUCKFEDER GROESSE 10 HUB 200 Inhalt pro Packung: 2 Stk.
GASDRUCKFEDER GROESSE 14 HUB 200 Inhalt pro Packung: 2 Stk.
GASDRUCKFEDER GROESSE 14 HUB 300 Inhalt pro Packung: 2 Stk.
GASDRUCKFEDER GROESSE 10 HUB 250 Inhalt pro Packung: 2 Stk.
GASDRUCKFEDER GROESSE 8 HUB 200 Inhalt pro Packung: 2 Stk.
GASDRUCKFEDER GROESSE 8 HUB 150 Inhalt pro Packung: 2 Stk.
GASDRUCKFEDER GROESSE 14 HUB 400 Inhalt pro Packung: 2 Stk.
GASDRUCKFEDER GROESSE 14 HUB 500 Inhalt pro Packung: 2 Stk.
Low-Voltage SOT23 µP Supervisors with Manual Reset and Watchdog Timer
Voltage Detectors in 4-Bump (2 x 2) Chip-Scale Package
GASDRUCKFEDER GROESSE 14 HUB 100 Inhalt pro Packung: 2 Stk. GASDRUCKFEDER GROESSE 14轮毂100 Inhalt亲Packung沙头角
GASDRUCKFEDER GROESSE 10 HUB 300 Inhalt pro Packung: 2 Stk. GASDRUCKFEDER GROESSE 10轮毂300 Inhalt亲Packung沙头角
GASDRUCKFEDER GROESSE 10 HUB 100 Inhalt pro Packung: 2 Stk. GASDRUCKFEDER GROESSE 10轮毂100 Inhalt亲Packung沙头角
GASDRUCKFEDER GROESSE 6 HUB 200 Inhalt pro Packung: 2 Stk. GASDRUCKFEDER GROESSE 6轮毂200 Inhalt亲Packung沙头角
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CTS, Corp.
Molex, Inc.
WIMA
|
| 2N6796LCC4 |
N-Channel Power MOSFET（Vdss00VId(cont).4A，Rds(on).18ΩN沟道功率型MOS场效应管（Vdss00VId(cont).4A，Rds(on).18Ω
|
SEME-LAB[Seme LAB]
|
| IRFM150 2N7224 |
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070惟)(N娌?????MOS?烘?搴??(Vdss:100V,Id(cont):34A,Rds(on):0.070惟))
N-Channel Power MOSFET(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):34A,Rds(on):0.070Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）4A条的Rds（on）：0.070Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00V的，身份证（续）4A条的Rds（on.070Ω））
|
SEMELAB LTD
Electronic Theatre Controls, Inc.
TE Connectivity, Ltd.
Semelab(Magnatec)
SEME-LAB[Seme LAB]
|
| 845PE 845GE |
82845GE Graphics and Memory Controller Hub (GMCH) and 82845PE Memory Controller Hub (MCH)
|
Intel Corp.
|
| IRFN140SMD |
ER CET 0 22 A, 100 V, 0.125 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Power MOSFET(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)(N沟道功率MOS场效应管(Vdss:100V,Id(cont):13.9A,Rds(on):0.077Ω)) N沟道功率MOSFET（减振钢板基本：100V的，身份证（续）3.9A，的Rds（on）：0.077Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本100V的，身份证（续）3.9A时，RDS（对）：0.077Ω））
|
TT electronics Semelab, Ltd.
International Rectifier, Corp.
Seme LAB
|
| IRFE230 2N6798U |
N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N沟道功率MOS场效应管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)) N沟道功率MOSFET（减振钢板基本：200伏，身份证（续）.8A时，RDS（上）：0.46Ω）（不适用马鞍山沟道功率场效应管（减振钢板基本00伏，身份证（续）.8A时，RDS（对）：0.46Ω））
N-Channel N沟道
|
NXP Semiconductors N.V.
TT electronics Semelab Limited
Seme LAB
|
| 82801BA 290687-002 |
Intel 82801BA I/O Controller Hub 2 (ICH2) and Intel 82801BAM I/O Controller Hub 2 Mobile
|
Intel Corporation
|
| SML80H12 SML100H11 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
SemeLAB
SEME-LAB[Seme LAB]
|
| NJU26105 |
AGC/eala BASS/T.cont/PEQ/Vol./HPF / QFP32-R1
|
JRC
|
| W81181AD W81181D W881181D_AD W-1 W81181D/AD W-15 W |
USB HUB CONTROLLER
Fuse
USB Hub Controller(USB 1.1)
ARM7 ProASIC3 1M System Gates
USB集线器控制器（USB 1.1的）
|
WINBOND[Winbond]
|
| APT1101RSFLL |
Volts:1100V RDS(ON)1Ohms ID(cont):13Amps|FREDFETs ( fast body diode)
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