| PART |
Description |
Maker |
| M5M5V4R01J-15 M5M5V4R01J-12 |
PTSE 5C 5#16 PIN RECP 4194304位（41943041位）的CMOS静态RAM
4194304-BIT (4194304-WORD BY 1-BIT) CMOS STATIC RAM
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5M417400CJ-7S M5M417400CTP-5 |
FAST PAGE MODE 16777216-BIT (4194304-WORD BY 4-BIT) DYNAMIC RAM 快速页面模6777216位（4194304 - Word位）动态随机存储器
|
Mitsubishi Electric, Corp.
|
| HM5117400AS7GS |
CMOS 4194304 WORD 8-BIT DYNAMIC RAM
|
List of Unclassifed Manufacturers
|
| M5M5V416BUG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5V408BFP M5M5V408BTP-85LW M5M5V408BKR-70HI |
512K X 8 STANDARD SRAM, 85 ns, PDSO32
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
| M5M5V416CWG-55HI M5M5V416CWG-70HI |
4194304-BIT (262144-WORD BY 16-BIT) CMOS STATIC RAM
Memory>Low Power SRAM
|
http://
RENESAS[Renesas Electronics Corporation]
|
| M6MGT331S8BKT M6MGB331S8BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
|
Renesas Electronics Corporation
|
| MSC23S4641E-8BS16 |
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (2BANK)(4M字4位同步动态RAM模块)
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (2BANK)(4M字64位同步动态RAM模块)
|
OKI SEMICONDUCTOR CO., LTD.
|
| M6MGT331S4BKT M6MGB331S4BKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT/4,194,304-WORD BY 8-BIT) CMOS 3.3V-ONLY FLASH MEMORY & 4,194,304-BIT (262,144-WORD BY 16-BIT/524,288-WORD B
|
Renesas Electronics Corporation
|
| TC514101AXX |
4194304 Word X 1 Bit Dynamic RAM
|
Toshiba
|
