| PART |
Description |
Maker |
| P930-06 P444 P465 P474 P577-04 P412W P412K P414KW |
THYRISTOR MODULE|AC SWITCH|1KV V(RRM)|44A I(T)
THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|20A I(T)
THYRISTOR MODULE|SCR DOUBLER|1KV V(RRM)|20A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|600V V(RRM)|20A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1KV V(RRM)|20A I(T)
THYRISTOR MODULE|AC SWITCH|600V V(RRM)|44A I(T)
16 BIT MCU/DSP 28LD 40MIPS 32KB FLASH, -40C to 125C, 28-SOIC 300mil, TUBE
|
Microchip Technology, Inc.
|
| GBJ2001 GBJ20005 GBJ2010 GBJ2002 GBJ2004 GBJ2006 G |
20A GLASS PASSIVATED BRIDGE RECTIFIER
|
DIODES[Diodes Incorporated]
|
| GBJ20005-F GBJ200051 GBJ2001-F |
20A GLASS PASSIVATED BRIDGE RECTIFIER
|
Diodes Incorporated
|
| PS21965-ST |
600V/20A low-loss CSTBTTM inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| CM10MD24H |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 20A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五（巴西）国际消费电子展|甲一（c
|
ITT, Corp.
|
| 164-22 163-28 163-12 164-12 164-26 164-20 164-30 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 20A I(C) | STR-5/16
TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 20A I(C) | STR-5/16
晶体管|晶体管|叩| 160V五（巴西）总裁|甲一c）| STR-5/16
晶体管|晶体管| npn型| 120伏特五（巴西）总裁|甲一c）| STR-5/16
TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管|叩| 40V的五（巴西）总裁|甲一（c）| STR-5/16
TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 20A I(C) | STR-5/16 晶体管|晶体管| npn型| 280伏特五（巴西）总裁|甲一（c）| STR-5/16
|
Ecliptek, Corp.
|
| GSIB2020 GSIB2040 GSIB2060 GSIB2080 |
Single-Phase Single In-Line, Bridge Rectifiers, Forward Current 20A
|
Vishay
|
| HUF75321D3 HUF75321D3S FN4351 |
20A/ 55V/ 0.036 Ohm/ N-Channel UltraFET Power MOSFETs
From old datasheet system
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036Ω, N沟道UltraFET功率MOS场效应管)
20A, 55V, 0.036 Ohm, N-Channel UltraFET Power MOSFETs(20A, 55V, 0.036惟, N娌??UltraFET???MOS?烘?搴??)
|
Intersil Corporation
FAIRCHILD SEMICONDUCTOR CORP
|
| 1KAB20E 1KAB100E 1KAB80E 1KAB-E 1KAB10E 1KAB40E 1K |
200V Bridge in a D-38 package
50V Bridge in a D-38 package
1000V Bridge in a D-38 package
100V Bridge in a D-38 package
400V Bridge in a D-38 package
600V Bridge in a D-38 package
800V Bridge in a D-38 package
1.2 amp rectifier bridge
|
http://
IRF[International Rectifier]
|
| SB200-05R |
50V/ 20A Rectifier
50V, 20A Rectifier Schottky Barrier Diode (Twin Type Cathode Common)
|
SANYO[Sanyo Semicon Device]
|
| 20ETS12STRR 20ETS08 20ETS08S 20ETS08STRL 20ETS08ST |
INPUT RECTIFIER DIODE
1200V 20A Std. Recovery Diode in a D2-Pakpackage
1200V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package
20ETS12/20ETS12S
800V 20A Std. Recovery Diode in a D2-Pakpackage
800V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package
From old datasheet system
SURFACE MOUNTABLE INPUT RECTIFIER DIODE
|
InternationalRectifier
IRF[International Rectifier]
|
