| PART |
Description |
Maker |
| QM75DY-HB |
75 A, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| RJM0407JSC RJM0407JSC-00-12 |
40 V - 20 A - N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
|
Renesas Electronics Corporation
|
| SSM6J07FU |
Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
| RJM0404JSC RJM0404JSC-15 |
Silicon N/P Channel Power MOS FET (6 in 1 Type) High Speed Power Switching
|
Renesas Electronics Corporation
|
| QM400HA-H |
400 A, 3 CHANNEL, NPN, Si, POWER TRANSISTOR
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| 2SJ200 |
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK1529 |
N CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SK246706 2SK2467 |
Silicon N Channel MOS Type High-Power Amplifier Application
|
Toshiba Semiconductor
|
| TPC8104-H |
Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII) High Speed and High Efficiency DC .DC Converters Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U-MOSII)
|
Toshiba Corporation
Toshiba Semiconductor
|
| CM1200HA-34H |
1200 A, 1700 V, N-CHANNEL IGBT
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
