| PART |
Description |
Maker |
| CGY2030M |
DECT 500 mW power amplifier
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| UAA3545 UAA3545HL UAA3545HL/C1 |
UAA3545; Fully integrated DECT transceiver
Fully integrated DECT transceiver TELECOM, CORDLESS, RF AND BASEBAND CIRCUIT, PQFP32
|
Philips
NXP Semiconductors N.V.
|
| PBL40309 |
3.6 V Differential Power Amplifier for DECT Telecommunications system
|
Ericsson Microelectronics
ERICSSON[Ericsson]
|
| MAAPSS0076 MAAPSS0076SMB MAAPSS0076TR-3000 |
DECT Power Amplifier 1880 - 1930 MHz
|
Tyco Electronics
|
| MAAM-007219-000000 MAAM-007219 MAAM-007219-TR3000 |
3.6 V, 450 mW DECT RF Power Amplifier IC 1880 - 1900 MHz
|
MACOM[Tyco Electronics]
|
| PCD5091 PCD5091H PCD5091HZ PCD5091HZC944 PCD5091HZ |
Low cost; low power DECT baseband controllers (ABC-PRO)
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲，450 V/500 V
Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors
N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC
Motorola, Inc
ON Semiconductor
|
| SA36AG |
500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors
500 Watt Peak Power MiniMOSORBZener
|
ON Semiconductor
|
| ADL5534-EVALZ ADL5534ACPZ-WP |
20 MHz to 500 MHz IF Gain Block 20 MHz00 MHz的中频增益模
20 MHz to 500 MHz IF Gain Block 20 MHz - 500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Analog Devices, Inc.
|
