| PART |
Description |
Maker |
| MT58L1MY18D MT58L512Y32D MT58L512Y36D MT58V1MV18D |
16Mb SYNCBURST?SRAM
16Mb SYNCBURST?/a> SRAM
16Mb SYNCBURSTSRAM
16Mb SYNCBURST?/a> SRAM
|
Micron Technology, Inc.
|
| MT58V1MV18D MT58L512Y36D MT58V512V32D MT58V512V36D |
16Mb SYNCBURST SRAM
|
Micron Technology
|
| KMM53632004BK |
32MB X 36 DRAM Simm Using 16MB X 4 & 16MB X 1
|
Samsung Semiconductor
|
| R1LV1616RSD-8SW R1LV1616R R1LV1616RBG-7SI R1LV1616 |
16Mb superSRAM (1M wordx16bit)
Memory>Low Power SRAM
|
http://
Renesas Electronics Corporation.
RENESAS[Renesas Electronics Corporation]
|
| K6F1616U6CNBSP K6F1616U6C |
16Mb(1M x 16 bit) Low Power SRAM
|
Samsung semiconductor
Samsung Electronic
|
| ID245K01 |
16MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| CXK77P36E160GB-43BE CXK77P18E160GB-4BE CXK77P18E16 |
1M X 18 STANDARD SRAM, 3.7 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.5 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 3.8 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
1M X 18 STANDARD SRAM, 4.1 ns, PBGA119 14 X 22 MM, 1.27 MM PITCH, BGA-119
16Mb LW R-L HSTL High Speed Synchronous SRAMs (512K x 36 or 1M x 18) 16Mb的龙运RL HSTL高速同步静态存储器（为512k × 3600万18
CAP 820PF 50V 20% X7R SMD-0603 TR-7 PLATED-NI/SN
|
http://
Yuasa Battery, Inc.
Integrated Circuit Technology Corp
Microsemi, Corp.
Sony, Corp.
Sony Corporation
|
| WED2DG472512V5D2 WED2DG472512V7D2 WED2DG472512V65D |
16MB (4x512Kx72) SYNC BURST-PIPELINE, DUAL KEY DIMM
|
White Electronic Design...
WEDC[White Electronic Designs Corporation]
|
| KMM5364003CK KMM5364103CK |
(KMM5364103CK / KMM5364003CK) 4MBx36 DRAM Simm Using 4MBx4 And 16MB Quad Cas
|
Samsung Semiconductor
|
| M29W128FL60N6E M29W128FL60N6F M29W128FL70ZA6E M29W |
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
|
Numonyx B.V
|
