PART |
Description |
Maker |
2N5330 SDT99703 2N4211 2N5616 SDT8302 2N5625 SDT16 |
30 A, 90 V, NPN, Si, POWER TRANSISTOR 300 V, NPN, Si, POWER TRANSISTOR 20 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 5 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-3 30 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, PNP, Si, POWER TRANSISTOR, TO-3 5 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 40 V, NPN, Si, POWER TRANSISTOR, TO-66 5 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-66 20 A, 60 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-61 10 A, 200 V, NPN, Si, POWER TRANSISTOR, TO-3
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SOLITRON DEVICES INC
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
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NXP Semiconductors Quanzhou Jinmei Electro...
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SPW17N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ... Cool MOS⑩ Power Transistor Cool MOS??Power Transistor Cool MOS Power Transistor Cool MOS?/a> Power Transistor
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INFINEON[Infineon Technologies AG]
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IPB77N06S3-09 IPI77N06S3-09 IPP77N06S3-09 SP0000-8 |
OptiMOST Power-Transistor ㈢的OptiMOS - T的功率晶体管 OptiMOS㈢-T Power-Transistor OptiMOS?-T Power-Transistor
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Maxim Integrated Products, Inc. Infineon Technologies AG
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2N6836 MJ15001 MJ4031 MJ15025 |
European Master Selection Guide 1986 15 A, 140 V, NPN, Si, POWER TRANSISTOR 16 A, 80 V, PNP, Si, POWER TRANSISTOR 16 A, 250 V, PNP, Si, POWER TRANSISTOR
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Motorola AMERICAN MICROSEMICONDUCTOR INC
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2SB1370 2SB1565 2SB1565F 2SB1655 |
Power Transistor (-60V/ -3A) Power Transistor (-60V, -3A) Power Transistor (-60V -3A) Power Transistor(-60V, -3A) 3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits
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ROHM[Rohm]
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SPP02N80C3 SPA02N80C3 |
Cool MOS™ Power Transistor Cool MOS Power Transistor Cool MOS& Power Transistor Cool MOS™ Power Transistor for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
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INFINEON[Infineon Technologies AG]
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IPB05N03LAG |
80 A, 25 V, 0.0078 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB OptiMOS㈢2 Power-Transistor OptiMOS?2 Power-Transistor
|
INFINEON[Infineon Technologies AG]
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2SB1628 2SB1628ZX 2SB1628-ZX-AZ |
3 A, 16 V, PNP, Si, POWER TRANSISTOR 3-Pin, Ultra-Low-Voltage, Low-Power µP Reset Circuits Low-VCE(sat) bipolar transistor PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
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Omron Electronics, LLC NEC Corp.
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UPA1478 UPA1478H UPA1478H-AZ |
2 A, 35 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR SIP-10 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
|
Micrel Semiconductor, Inc. NEC[NEC]
|
IPB091N06NG IPP091N06NG |
OptiMOSPower-Transistor 的OptiMOS㈢功率晶体管 OptiMOS㈢ Power-Transistor OptiMOS? Power-Transistor
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INFINEON[Infineon Technologies AG]
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