| PART |
Description |
Maker |
| BAS16 BAS16/T1 BAS16W/T1 |
DIODE KLEINSIGNAL SMD 贴片二极管KLEINSIGNAL
CY7C603xx Wireless; Memory Size: 8K; RAM: 512B; Vcc (V): 2.4-3.6V; Core: M8C; Code Memory Architecture: Flash; Development Kit: CY3656 二极管采用SOT 323 SCHALT
High-speed diode
|
Won-Top Electronics Co., Ltd.
Philips Semiconductors
NXP Semiconductors
|
| BDT63C BDT63A-SM BDT63C-SM |
DIODE TVS 6.5V 1500W UNI 5% SMC
TRANSISTOR DARLINGTON
|
HI
|
| K1S1616B1A-I K1S1616B1A K1S1616B1A-BI70 K1S1616B1A |
1Mx16 bit Uni-Transistor Random Access Memory
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
|
| R15KP20 R15KP200A R15KP200C R15KP100 R15KP100A R15 |
TRANSIENT VOLTAGE SUPPRESSORS
Diode TVS Single Uni-Dir 100V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 90V 15KW 2-Pin Case 5R
Diode TVS Single Bi-Dir 40V 15KW 2-Pin Case 5R
Diode TVS Single Bi-Dir 26V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 36V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 51V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 70V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 58V 15KW 2-Pin Case 5R
Diode TVS Single Uni-Dir 180V 15KW 2-Pin Case 5R
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
New Jersey Semiconductors
|
| K1S321611C K1S321611C-FI70 K1S321611C-I |
2Mx16 bit Uni-Transistor Random Access Memory 2Mx16位统一晶体管随机存取存储器
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K1S3216BCC |
2Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
SAMSUNG Electronics
|
| K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory
|
Samsung Electronic
|
| K1S64161CCNBSP K1S64161CC |
4Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K1S1616BCA |
1Mx16 bit Page Mode Uni-Transistor Random Access Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| 1N6275 1N6281 1N6274A 1N6292 1N6271A 1N6289 1N6269 |
Diode TVS Single Uni-Dir 12.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 21.8V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 11.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 60.7V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.55V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 45.4V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 8.1V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 6.63V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 97.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 89.2V 1.5KW 2-Pin Case 1
Diode TVS Single Uni-Dir 7.37V 1.5KW 2-Pin Case 1
Diode TVS Single Bi-Dir 7.37V 1.5KW 2-Pin Case 1.5KE
|
New Jersey Semiconductor
|
| 11AA02E48-I_SN 11AA02E48-I_TT 11AA02E48T-I_SN 11AA |
2K UNI/O? Serial EEPROM with EUI-48 Node Identity
2K UNI/O垄莽 Serial EEPROM with EUI-48垄芒 Node Identity
|
Microchip Technology
|
| CMBA847G CMBA847E CMBA847F |
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 400 - 800 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 250 - 500 hFE.
0.150W General Purpose NPN SMD Transistor. 50V Vceo, 0.200A Ic, 150 - 300 hFE.
TRANSISTOR | BJT | NPN | 50V V(BR)CEO | 200MA I(C) | SOT-23
|
Continental Device India Limited
|
