PART |
Description |
Maker |
ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
|
HP[Agilent(Hewlett-Packard)] Agilent (Hewlett-Packard)
|
ATF-46101 |
2-10 GHz Medium Power Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ... 2.4-2.5 GHz Power Amplifier From old datasheet system 2.4?2.5 GHz Power Amplifier Single-band power amplifiers 2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc] ANADIGICS[ANADIGICS Inc] ANADIGICS Inc ANADIGICS, Inc.
|
ML4963-138 ML4971-138 ML4941-111 ML4941-118 ML4941 |
40 GHz - 50 GHz, GALLIUM ARSENIDE, GUNN DIODE 50 GHz - 60 GHz, GALLIUM ARSENIDE, GUNN DIODE 27 GHz - 32 GHz, GALLIUM ARSENIDE, GUNN DIODE
|
|
MGR2018CT_D ON1880 MGR2018CT |
Power Manager Gallium Arsenide Power Rectifier From old datasheet system GALLIUM ARSENIDE RECTIFIER 20 AMPERES 180 VOLTS
|
MOTOROLA[Motorola, Inc] ON Semi
|
MGR2025CT MGR2025CT_D ON1881 |
From old datasheet system GALLIUM ARSENIDE RECTIFIER 20 AMPERES 250 VOLTS Power Manager Gallium Arsenide Power Rectifier
|
MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc] ON Semi
|
ATF-26884 ATF-26884-STR ATF-26884-TR1 ATF26884 |
2-16 GHz General Purpose Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
NPT1015 NPT1015-15 |
Gallium Nitride 28V, 45W, DC-3.5 GHz HEMT
|
M/A-COM Technology Solutions, Inc. M/A-COM Technology Solution... M/A-COM Technology Solu...
|
NPT2019 |
Gallium Nitride 48V, 25W, DC-6 GHz HEMT
|
M/A-COM Technology Solutions, Inc.
|
ATF-13336 ATF-13336-STR ATF-13336-TR1 |
2-16 GHz Low Noise Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|
ATF-21186 ATF-21186-STR ATF-21186-TR1 |
0.5-6 GHz General Purpose Gallium Arsenide FET
|
Agilent (Hewlett-Packard) HP[Agilent(Hewlett-Packard)]
|