| PART |
Description |
Maker |
| ISTS823A ISTS824A |
1mm Aperture Opto-Electronic Single Channel Slotted Interrupter Switches with Transistor Sensor and 450mm Flying Leads(高增益，导通集电极电流200μA的光断电器（由砷化镓红外
1mm Aperture Opto-Electronic Single Channel Slotted Interrupter Switches with Transistor Sensor and 450mm Flying Leads(高增益，导通集电极电流500μA的光断电器（由砷化镓红外
|
Isocom Components
|
| 130091-0031 |
Woodhead Standard Duty Reel with Flying Leads, 16/3 SJTOW Cord, 15.24m Cord Length
|
Molex Electronics Ltd.
|
| AM29F400AB AM29F400AB-120EC AM29F400AB-120ECB AM29 |
4 Megabit (524288 x 8-Bit/262144 x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory
|
AMD[Advanced Micro Devices]
|
| 28F256 AM28F256-150FCB AM28F256-120FE AM28F256-120 |
Octal bus transceivers 20-SOIC 0 to 70
Serial-out shift registers with input latches 16-SOIC 0 to 70
Octal bus transceivers 20-PDIP 0 to 70
Serial-out shift registers with input latches 16-PDIP 0 to 70
Voltage-controlled oscillator 14-SOIC 0 to 70
Serial-out shift registers with input latches 16-SO 0 to 70
Shift registers with input latches 20-SOIC 0 to 70
Dual voltage-controlled oscillators 16-SOIC 0 to 70
Dual voltage-controlled oscillators 16-PDIP 0 to 70
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDSO32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 70 ns, PQCC32
Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 150 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 150 ns, PDIP32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 256千比特（32亩8位）的CMOS 12.0伏，整体擦除闪存
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory
Voltage-controlled oscillator 14-PDIP 0 to 70 32K X 8 FLASH 12V PROM, 200 ns, PQCC32
256 Kilobit (32 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 32K X 8 FLASH 12V PROM, 90 ns, PDIP32
Octal bus transceivers with open collector outputs 20-SOIC 0 to 70
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| RSF74H100RN RSF74Y100RN RSF76Y050TV RSF76Y100RN RS |
Flying Lead or M12 plug connection
|
Cynergy3 Co
|
| W19B320BB W19B320BB-H W19B320BB-M W19B320BT W19B32 |
2.7~3.6-volt write (program and erase) operations
|
Winbond
|
| AN1159 |
TIPS TO REDUCE PROGRAM AND ERASE TIMES
|
SGS Thomson Microelectronics
|
| DS24B33SR DS24B33ST DS24B33R DS24B33T |
4Kb 1-Wire EEPROM with 200k Write/Erase Cycles
|
Maxim Integrated Products
Maxim Integrated Produc...
|
| N25Q032A13ESF40G |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
| N25Q512A13GSF40F N25Q512A13GSFA0F N25Q512A13G1240 |
Micron Serial NOR Flash Memory 3V, Multiple I/O, 4KB Sector Erase
|
Micron Technology
|
