| PART |
Description |
Maker |
| M391T2953BGZ0-CD5_CC M391T2953BGZ3-CD5_CC M378T335 |
64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240
TVS ZENER BIDIRECT 1500W 13V SMC
TVS BIDIRECT 1500W 130V SMC
240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| P6KE250-AP P6KE10A-AP P6KE10A-TP P6KE200A-AP P6KE2 |
600WATTS TRANSIENT VOLTAGE SUPPRESSOR 6.8 TO 540 VOLTS
TVS 600W 7.5V UNIDIRECT DO-15 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
TVS 600W 68V BIDIRECT DO-15 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-15
TVS 600W 24V UNIDIRECT DO-15 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
TVS 600W 10V UNIDIRECT DO-15 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15
TVS 600W 10V BIDIRECT DO-15
TVS 600W 150V BIDIRECT DO-15
TVS 600W 20V BIDIRECT DO-15
TVS 600W 51V BIDIRECT DO-15
|
Micro Commercial Compon...
http://
Micro Commercial Components, Corp.
|
| GM71C17800C GM71C17800C-5 GM71C17800C-7 GM71C17800 |
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 60 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
2,097,152 WORDS x 8 BIT CMOS DYNAMIC RAM 2M X 8 FAST PAGE DRAM, 50 ns, PDSO28
x8 Fast Page Mode DRAM 2M X 8 FAST PAGE DRAM, 70 ns, PDSO28
2Mx8|5V|2K|5/6|FP/EDO DRAM - 16M
IC LOGIC 1G125 SINGLE BUS BUFFER GATE WITH 3-STATE OUTPUTS -40 85C SOT-23-5 3000/REEL
2/097/152 WORDS x 8 BIT CMOS DYNAMIC RAM
|
Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
|
| MB814100C-60 MB814100C-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1 位快速页面存取模式动态RAM)
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB8116160A-70 |
CMOS 1 M ×16 BIT
Fast Page Mode DRAM(CMOS 1 M ×16 位快速页面存取模式动态RAM)
CMOS 1 M ?16 BIT Fast Page Mode DRAM(CMOS 1 M ?16 浣?揩??〉?㈠???ā寮????AM)
|
Fujitsu Limited
|
| PDPD431636L |
1M-Bit CMOS Synchronous Fast Static RAM(1M CMOS 同步快速静态RAM) 100万位CMOS同步快速静态RAM100万的CMOS同步快速静态内存）
|
NEC, Corp.
|
| MB814400A-80 MB814400A-60 MB814400A-70 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4M ×1 位快速页面存取模式动态RAM)
|
Fujitsu Limited
|
| MB814400D-60 |
CMOS 4 M ×1 BIT
Fast Page Mode DRAM(CMOS 4 M ×1位速页面存取模式动态RAM)
|
Fujitsu Limited
|
| KM44C256D KM44C256D-6 KM44C256D-7 KM44C256D-8 |
256k x 4Bit CMOS DRAM with Fast Page Mode
256 x 4 Bit CMOS Dynamic RAM with Fast Page Mode 256 × 4位CMOS动态随机存储器的快速页面模
|
Samsung Electronics
Samsung Semiconductor Co., Ltd.
|
| NX29F010-90PL NX29F010-70TI NX29F010-70W NX29F010- |
1M-BIT (128K x 8-bit) CMOS, 5.0V Only ULTRA-FAST SECTORED FLASH MEMORY
|
ETC[ETC]
|
| UPD444016G5-12Y-7JF UPD444016G5-10Y-7JF UPD444016G |
CONNECTOR ACCESSORY
4M-BIT CMOS FAST SRAM 256K-WORD BY 16-BIT EXTENDED TEMPERATURE OPERATION
|
NEC Corp.
NEC[NEC]
|
| UPD444004LLE-A8 UPD444004LLE-A12 UPD444004L UPD444 |
4M-BIT CMOS FAST SRAM 1M-WORD BY 4-BIT
|
NEC Corp.
|
