PART |
Description |
Maker |
HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷 3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh 3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)
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http:// SIEMENS AG
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HYB314405BJL-70 HYB314405BJL-60 HYB314405BJL-50 HY |
1M x 4 Bit EDO DRAM 3.3 V 50 ns 1M x 4 Bit EDO DRAM 3.3 V 60 ns -1M x 4-Bit Dynamic RAM 1M x 4 Bit EDO DRAM 3.3 V 70 ns 1M x 4-Bit Dynamic RAM (Hyper Page Mode (EDO) version) From old datasheet system
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Infineon SIEMENS[Siemens Semiconductor Group]
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HYM72V1005GU-60 HYM72V1005GU-50 HYM64V1005GU-60 HY |
1M x 72 Bit ECC DRAM Module unbuffered 1M x 64 Bit DRAM Module unbuffered From old datasheet system 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 72 EDO DRAM MODULE, 60 ns, DMA168 3.3V 1M x 64-Bit EDO-DRAM Module 3.3V 1M x 72-Bit EDO-DRAM Module 1M X 64 EDO DRAM MODULE, 60 ns, DMA168
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Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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HM5117805LJ-5 HM5117805S-6 HM5117805TT-5 HM5117805 |
16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh 2M X 8 EDO DRAM, 50 ns, PDSO28
|
Elpida Memory, Inc. ELPIDA MEMORY INC
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Q67100-Q3017 HM364035 HYM364035GS-60 HYM364035S HY |
4M x 36 Bit EDO DRAM Module with Parity From old datasheet system 4M x 36-Bit EDO-DRAM Module 4M X 36 EDO DRAM MODULE, 60 ns, SMA72
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Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
HYB3165405AJ-40 HYB3164405AJ-40 HYB3164405AT-50 HY |
High-Speed Fully-Differential Amplifiers 8-SOIC 0 to 70 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, SOJ-32 16M X 4 EDO DRAM, 40 ns, PDSO32 0.400 INCH, PLASTIC, TSOP2-32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 60 ns, PDSO32 16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO32
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SIEMENS AG Infineon Technologies AG
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HYB3164165BT-40 HYB3165165BT-40 HYB3166165BT-40 HY |
4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 60 ns, PDSO50 INDUCTOR CHIP .10UH 5% 0805 SMD 4M X 16 EDO DRAM, 60 ns, PDSO50 4M x 16-Bit Dynamic RAM 4M X 16 EDO DRAM, 40 ns, PDSO50
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http:// SIEMENS A G SIEMENS AG
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TC514280BZLL-70 TC5116440BSJ-70 TC5116105BSJ-60 TC |
256K X 18 FAST PAGE DRAM, 70 ns, PZIP40 ZIP-40 4M X 4 OTHER DRAM, 70 ns, PDSO26 16M X 1 EDO DRAM, 60 ns, PDSO24 4M X 4 OTHER DRAM, 50 ns, PDSO26 16K X 4 CACHE SRAM, 10 ns, PDIP24
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SIEMENS AG
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HYB3116165BSJ-70 HYB3116165BST-70 HYB3118165BSJ-70 |
1M X 16 EDO DRAM, 70 ns, PDSO42 1M X 16 EDO DRAM, 70 ns, PDSO44
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SIEMENS AG
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HYM72V8025GS-60 HYM72V8025GS-50 HYM72V8035GS-60 HY |
8M x 72 Bit ECC EDO DRAM Module buffered 8M x 72-Bit EDO- DRAM Module (ECC - Module) 8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168 8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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IBM0116405P IBM0116405B |
4M x 4 12/10 EDO DRAM(16M动态RAM(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通)) 4米4 120日EDO公司的DRAM,600位动态随机存储器(超页面模式读写并带22条地址线,其中12条为行地址选通,10条为列地址选通) 4M x 4 12/10 EDO DRAM(16M浣??ㄦ?RAM锛??椤甸?妯″?璇诲?骞跺甫22?″???嚎锛??涓?2?′负琛????????10?′负?????????)
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IBM Microeletronics International Business Machines, Corp.
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HM5116405LS-5 HM5116405LS-6 HM5116405LS-7 HM511640 |
16M EDO DRAM (4-Mword x 4-bit), 50ns 16M EDO DRAM (4-Mword x 4-bit), 60ns 16M EDO DRAM (4-Mword x 4-bit), 70ns
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Elpida Memory
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