PART |
Description |
Maker |
MSC2323258D-XXDS4 MSC2323258D-XXBS4 MSC2323258D MS |
2,097,152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO From old datasheet system 2097152-word x 32-bit DYNAMIC RAM MODULE : FAST PAGE MODE TYPE WITH EDO 2M X 32 EDO DRAM MODULE, 60 ns, SMA72 SIMM-72 DPDT 10A MINI 115VAC 2097152字32位动态随机存储器模块:快速页面模式型与江
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OKI electronic components OKI[OKI electronic componets] OKI SEMICONDUCTOR CO., LTD. Oki Electric Industry Co., Ltd.
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MH16S64PHB-6 B99031 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM From old datasheet system 1073741824-BIT ( 16777216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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M5M5V208RV-12L M5M5V208RV-12LL M5M5V208VP-85L M5M5 |
2097152-BIT (262144-WORD BY 8-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
M5M27C202JK-12I M5M27C202JK-15I M5M27C202K-12I M5M |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM 2097152位(131072字由16位)的CMOS电可擦除只读光盘可重复编
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Mitsubishi Electric, Corp. MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M4V64S30ATP-10L M5M4V64S30ATP-8A M5M4V64S30ATP-8 |
From old datasheet system 64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M5M4V64S30ATP-12 M5M4V64S30ATP-8 M64S30A1 |
64M (4-BANK x 2097152-WORD x 8-BIT) Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Semiconductor
|
MK32VT1632-10YC |
16777216 Word x 32 Bit Synchronous Dynamic RAM Module (2 BANK)(16M字2位同步动态RAM模块) From old datasheet system 16,777,216 Word x 32 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):
|
OKI SEMICONDUCTOR CO., LTD.
|
HM514100DLS-6 HM514100DLS-7 HM514100DLS-8 |
4,194,304-word x 1-bit dynamic RAM, 60ns 4,194,304-word x 1-bit dynamic RAM, 70ns 4,194,304-word x 1-bit dynamic RAM, 80ns
|
Hitachi Semiconductor
|
M5M467400DJ M5M467400DTP-5 M5M467400DTP-5S M5M4674 |
FAST PAGE MODE 67108864-BIT (4194304-WORD BY 16-BIT) DYNAMIC RAM FAST PAGE MODE 67108864-BIT (8388608-WORD BY 8-BIT) DYNAMIC RAM FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
M6MGT331S8AKT M6MGB331S8AKT |
33,554,432-BIT (2,097,152 - WORD BY 16-BIT /4,194,304-WORD BY 8-BIT) CMOS FLASH MEMORY & 8,388,608-BIT (524,288-WORD BY 16-BIT /1,048,576-WORD BY 8-BI
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Renesas Electronics Corporation
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