PART |
Description |
Maker |
MR27V3266D |
2M x16 / 1M x32 Synchronous OTP ROM
|
OKI[OKI electronic componets]
|
UPD4382362GF-A75B UPD4382322GF-A75B UPD4382182GF-A |
x18 Fast Synchronous SRAM x16 Fast Synchronous SRAM x16快速同步SRAM x36 Fast Synchronous SRAM x36快速同步SRAM x32 Fast Synchronous SRAM X32号,快速同步SRAM
|
Electronic Theatre Controls, Inc.
|
M58LW064 M58LW064BZA M58LW064A M58LW064A150NF1T M5 |
64 Mbit x16 and x16/x32, Block Erase Low Voltage Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
KBY00U00VA-B450 |
8Gb DDP (512M x16) NAND Flash 4Gb (64M x32 64M x32) 2/CS
|
Samsung semiconductor
|
MT46H16M32LG MT46H32M16LF MT46H32M16LFBF-6ITC MT46 |
512Mb: x16, x32 Mobile Low-Power DDR SDRAM Features
|
Micron Technology
|
M58LW064B M58LW064A 7239 |
64 Mbit (4Mb x16 or 2Mb x32, Uniform Block) 3V Supply Flash Memories From old datasheet system
|
STMicroelectronics
|
K7A403609B06 |
128Kx36/x32 & 256Kx18 Synchronous SRAM
|
Samsung semiconductor
|
UPD431132LGF-10 UPD431132LGF-14 UPD431132LGF-12 |
x32 Fast Synchronous SRAM X32号,快速同步SRAM
|
ON Semiconductor
|
GS81132Q4I GS81132Q6I |
x32 Fast Synchronous SRAM X32号,快速同步SRAM
|
Altera, Corp.
|
HY5V66EF6 HY5V66EF6-5 HY5V66EF6-6 HY5V66EF6-7 HY5V |
64Mb Synchronous DRAM based on 1M x 4Bank x16 I/O 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
|
Hynix Semiconductor, Inc. HYNIX[Hynix Semiconductor]
|
IS61SF25616 IS61SF25616-10B IS61SF25616-10TQI IS61 |
x16 Fast Synchronous SRAM x16快速同步SRAM x18 Fast Synchronous SRAM 256K x 16, 256K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM
|
HIROSE ELECTRIC Co., Ltd. ISSI[Integrated Silicon Solution, Inc]
|
MT58LC64K32G1LG-5 MT58LC64K32G1LG-10 MT58LC64K32G1 |
x32 Fast Synchronous SRAM x18 Fast Synchronous SRAM x36 Fast Synchronous SRAM x36快速同步SRAM
|
Amphenol, Corp.
|